4A 650V N channel MOSFET Hangzhou Silan Microelectronics SVF4N65CAF for AC DC power supply designs
Key Attributes
Model Number:
SVF4N65CAF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA;4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.1pF
Number:
1 N-channel
Output Capacitance(Coss):
55pF
Input Capacitance(Ciss):
430pF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
SVF4N65CAF
Package:
TO-220F-3
Product Description
Product Description
The SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS field-effect transistor manufactured using Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high-energy pulse withstand capability in avalanche and commutation modes. It is widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Halogen free
Technical Specifications
| Part Number | Package | General Description | RDS(on)(typ.)@VGS=10V | VDS | ID (TC=25C) | EAS (Note 1) | RJC | RJA |
| SVF4N65CAF | TO-220F-3L | 4A, 650V N-CHANNEL MOSFET | 2.3 | 650V | 4.0A | 215mJ | 4.17C/W | 62.5C/W |
| SVF4N65CAD | TO-252-2L | 4A, 650V N-CHANNEL MOSFET | 2.3 | 650V | 4.0A | 215mJ | 1.62C/W | 62.0C/W |
| SVF4N65CAM | TO-251D-3L | 4A, 650V N-CHANNEL MOSFET | 2.3 | 650V | 4.0A | 215mJ | 1.58C/W | 62.0C/W |
| SVF4N65CAMJ | TO-251J-3L | 4A, 650V N-CHANNEL MOSFET | 2.3 | 650V | 4.0A | 215mJ | 1.58C/W | 62.0C/W |
| SVF4N65CAMN | TO-251N-3L | 4A, 650V N-CHANNEL MOSFET | 2.3 | 650V | 4.0A | 215mJ | 1.58C/W | 62.0C/W |
| SVF4N65CAK | TO-262-3L | 4A, 650V N-CHANNEL MOSFET | 2.3 | 650V | 4.0A | 215mJ | 1.39C/W | 62.5C/W |
2501091111_Hangzhou-Silan-Microelectronics-SVF4N65CAF_C467748.pdf
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