NPN Transistor SOT89 3L Package Featuring High Diode PXT8050 Suitable for Electronic Applications
Key Attributes
Model Number:
PXT8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
PXT8050
Package:
SOT-89-3L
Product Description
Product Overview
The PXT8050 is an NPN transistor in a SOT-89-3L plastic-encapsulated package. It serves as a compliment to the PXT8550 and is designed for various electronic applications requiring reliable transistor performance. Key features include a continuous collector current of 1.5A and a collector power dissipation of 0.5W.
Product Attributes
- Brand: HIGH DIODE SEMICONDUCTOR
- Package Type: SOT-89-3L
- Transistor Type: NPN
- Marking: Y1 (Solid dot = Green molding compound device)
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current -Continuous | IC | 1.5 | A | |||
| Collector Power dissipation | PC | (Ta=25 unless otherwise noted) | 0.5 | W | ||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | |||
| Thermal Resistance From Junction To Ambient | RJA | 250 | /W | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=100uA, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=0.1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | ICEO | VCE=20V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=1V, IC=100mA | 200 | 350 | ||
| DC current gain | hFE(2) | VCE=1V, IC=800mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=800mA, IB=80mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=800mA, IB=80mA | 1.2 | V | ||
| Base-emitter voltage | VBE | VCE=1V, IC=10mA | 1 | V | ||
| Base-emitter positive favor voltage | VBEF | IB=1A | 1.55 | V | ||
| Transition frequency | fT | VCE=10V,IC=50mA,f=30MHz | 100 | MHz | ||
| Output capacitance | Cob | VCB=10V,IE=0,f=1MHz | 15 | pF |
2410121535_High-Diode-PXT8050_C22458624.pdf
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