Durable PNP transistor High Diode S8550 in SOT23 package designed for multiple electronic circuit uses
Key Attributes
Model Number:
S8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S8550
Package:
SOT-23
Product Description
Product Overview
The S8550 is a complementary PNP transistor to the S8050, designed for general-purpose applications. It features a SOT-23 plastic-encapsulated package, offering reliable performance for various electronic circuits.
Product Attributes
- Brand: High Diode Semiconductor
- Package Type: SOT-23
- Transistor Type: PNP
- Complementary to: S8050
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Max | Unit |
| V(BR)CBO | Collector-base breakdown voltage | IC = -100A, IE=0 | -40 | V | |
| V(BR)CEO | Collector-emitter breakdown voltage | IC =-1mA, IB=0 | -25 | V | |
| V(BR)EBO | Emitter-base breakdown voltage | IE= -100A, IC=0 | -5 | V | |
| ICBO | Collector cut-off current | VCB= -40V, IE=0 | -0.1 | A | |
| ICEO | Collector cut-off current | VCE= -20V, IB=0 | -0.1 | A | |
| IEBO | Emitter cut-off current | VEB= -3V, IC=0 | -0.1 | A | |
| hFE(1) | DC current gain | VCE= -1V, IC= -50mA | 120 | 400 | |
| hFE(2) | DC current gain | VCE= -1V, IC= -500mA | 50 | ||
| VCE(sat) | Collector-emitter saturation voltage | IC=-500mA, IB= -50mA | -0.6 | V | |
| VBE(sat) | Base-emitter saturation voltage | IC=-500mA, IB= -50mA | -1.2 | V | |
| fT | Transition frequency | VCE= -6V, IC= -20mA, f=30MHz | 150 | MHz | |
| PC | Collector Power Dissipation | 300 | mW | ||
| RJA | Thermal Resistance From Junction To Ambient | 417 | /W | ||
| Tj | Junction Temperature | 150 | |||
| Tstg | Storage Temperature | -55 | +150 |
2410121317_High-Diode-S8550_C466626.pdf
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