Fast Switching N Channel MOSFET Featuring HUASHUO HSBA3006 with Low Gate Charge and High Reliability
Key Attributes
Model Number:
HSBA3006
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
81A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
210pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.295nF@15V
Pd - Power Dissipation:
59W
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
HSBA3006
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA3006 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter systems. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Device Available
- Reliability: 100% EAS Guaranteed, Full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 81 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 51 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 15 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 12 | A | |||
| IDM | Pulsed Drain Current2 | 160 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 115.2 | mJ | |||
| IAS | Avalanche Current | 48 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 59 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | 1 | --- | 62 | /W | |
| RJC | Thermal Resistance Junction-Case | 1 | --- | 2.1 | /W | |
| Product Summary | ||||||
| Model | HSBA3006 | |||||
| Package | PRPAK5*6 | |||||
| VDS | Drain-Source Voltage | 30 | V | |||
| RDS(ON),max | Max. On-Resistance | VGS=10V, ID=81A | 5.5 | m | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V, ID=30A | --- | 5.5 | m | |
| VGS=4.5V, ID=15A | --- | 9 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 1.2 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=24V, VGS=0V, TJ=25 | --- | 1 | uA | |
| VDS=24V, VGS=0V, TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=5V, ID=30A | 43 | --- | S | |
| Rg | Gate Resistance | VDS=0V, VGS=0V, f=1MHz | 1.7 | --- | ||
| Qg | Total Gate Charge | VDS=15V, VGS=4.5V, ID=15A | 20 | --- | nC | |
| Qgs | Gate-Source Charge | 7.6 | --- | nC | ||
| Qgd | Gate-Drain Charge | 7.2 | --- | nC | ||
| td(on) | Turn-On Delay Time | VDD=15V, VGS=10V, RG=3.3, ID=15A | 7.8 | --- | ns | |
| tr | Rise Time | 15 | --- | ns | ||
| td(off) | Turn-Off Delay Time | 37.3 | --- | ns | ||
| tf | Fall Time | 10.6 | --- | ns | ||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | 2295 | --- | pF | |
| Coss | Output Capacitance | 267 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 210 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,6 | VG=VD=0V, Force Current | --- | 81 | A | |
| ISM | Pulsed Source Current2,6 | --- | 160 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V, IS=1A, TJ=25 | --- | 1 | V | |
| trr | Reverse Recovery Time | IF=20A, di/dt=100A/s, TJ=25 | 14 | --- | ns | |
| Qrr | Reverse Recovery Charge | 5 | --- | nC | ||
Notes:
1. Data tested on a surface-mounted 1 inch2 FR-4 board with 2OZ copper.
2. Data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=48A.
4. Power dissipation is limited by 150 junction temperature.
5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
6. Continuous Source Current is limited by package.
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBA3006 | PRPAK5*6 | 3000/Tape&Reel |
2410121655_HUASHUO-HSBA3006_C5341689.pdf
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