650V N Channel MOSFET Hangzhou Silan Microelectronics SVF4N65M with Low On State Resistance
Key Attributes
Model Number:
SVF4N65M
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.1pF
Number:
1 N-channel
Output Capacitance(Coss):
55pF
Input Capacitance(Ciss):
430pF
Pd - Power Dissipation:
77W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
SVF4N65M
Package:
TO-251D-3
Product Description
SVF4N65F/M/MJ/D - 4A, 650V N-CHANNEL MOSFET
The SVF4N65F/M/MJ/D is an N-channel enhancement mode power MOS field effect transistor utilizing Silan proprietary F-CellTM structure VDMOS technology. This advanced process and cell structure are optimized for minimal on-state resistance, superior switching performance, and enhanced high energy pulse handling in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Pb free, Halogen free
Technical Specifications
| Part No. | Package | RDS(on)(typ.)@VGS=10V | VDS | ID (TC=25C) | EAS (Note 1) | RJC | RJA |
| SVF4N65F | TO-220F-3L | 2.3 | 650V | 4.0A | 215 mJ | 4.17 C/W | 62.5 C/W |
| SVF4N65MJ | TO-251J-3L | 2.3 | 650V | 4.0A | 215 mJ | 1.58 C/W | 62.0 C/W |
| SVF4N65M | TO-251D-3L | 2.3 | 650V | 4.0A | 215 mJ | 1.62 C/W | 62.0 C/W |
| SVF4N65DTR | TO-252-2L | 2.3 | 650V | 4.0A | 215 mJ | 1.62 C/W | 62.0 C/W |
Notes:
1. L=30mH, IAS=3.6A, VDD=100V, RG=25, starting TJ=25C;
2501091111_Hangzhou-Silan-Microelectronics-SVF4N65M_C403822.pdf
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