SOT23 Package 30V MOSFET Featuring High Diode 3402 Ideal for Load Switches and Battery Applications
Key Attributes
Model Number:
3402
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
RDS(on):
85mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 N-channel
Output Capacitance(Coss):
54pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
389pF
Gate Charge(Qg):
4.4nC@4.5V
Mfr. Part #:
3402
Package:
SOT-23
Product Description
Product Overview
This is a 30V N-Channel MOSFET in a SOT-23 plastic-encapsulated package, designed for high-performance applications. It features TrenchFET technology for excellent RDS(on) and low gate charge, making it ideal for DC/DC converters, load switches for portable devices, and battery switches. The device is RoHS compliant.
Product Attributes
- Brand: HIGH DIODE SEMICONDUCTOR
- Package Type: SOT-23
- Technology: TrenchFET Power MOSFET
- Compliance: RoHS Compliant
- Diode Type: High Diode
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit | |
|---|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | |||||||
| V(BR)DSS | 30 | V | |||||
| RDS(on) TYP | @10V | 34 | m | ||||
| @4.5V | 37 | m | |||||
| @2.5V | 45 | m | |||||
| ID | 4 | A | |||||
| ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted) | |||||||
| Drain-Source Voltage | VDS | 30 | V | ||||
| Gate-Source Voltage | VGS | 12 | V | ||||
| Continuous Drain Current | ID | 4 | A | ||||
| Pulsed Drain Current(1) | IDM | 15 | A | ||||
| Power Dissipation | PD | 0.35 | W | ||||
| Thermal Resistance from Junction to Ambient(2) | RJA | 357 | /W | ||||
| Junction Temperature | TJ | 150 | |||||
| Storage Temperature | TSTG | -55 | ~ | +150 | |||
| ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) | |||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | |||
| Zero gate voltage drain current | IDSS | VDS =30V,VGS = 0V | 1 | A | |||
| Gate-body leakage current | IGSS | VGS =12V, VDS = 0V | 100 | nA | |||
| Gate threshold voltage(3) | VGS(th) | VDS =VGS, ID =250A | 1.5 | V | |||
| Drain-source on-resistance(3) | RDS(on) | VGS =10V, ID =4A | 34 | 52 | m | ||
| VGS =4.5V, ID =3A | 37 | 65 | |||||
| VGS =2.5V, ID =2A | 45 | 85 | |||||
| Forward tranconductance(3) | gFS | VDS =5V, ID =3.6A | 13 | S | |||
| DYNAMIC CHARACTERISTICS(4) | |||||||
| Input Capacitance | Ciss | VDS =15V,VGS =0V,f=1MHz | 389 | pF | |||
| Output Capacitance | Coss | 54 | |||||
| Reverse Transfer Capacitance | Crss | 40 | |||||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 3.5 | ||||
| SWITCHING CHARACTERISTICS(4) | |||||||
| Turn-on delay time | td(on) | VGS=10V,VDS=15V, RL=3.75,RGEN=6 | 3.5 | ns | |||
| Turn-on rise time | tr | 1.2 | |||||
| Turn-off delay time | td(off) | 22 | |||||
| Turn-off fall time | tf | 2.2 | |||||
| Total gate charge | Qg | VDS =15V,VGS =4.5V,ID =4A | 4.4 | nC | |||
| Gate-source charge | Qgs | 0.7 | |||||
| Gate-drain charge | Qgd | 1.3 | |||||
| SOURCE-DRAIN DIODE CHARACTERISTICS | |||||||
| Body Diode Voltage(3) | VSD | IS=1A, VGS = 0V | 0.5 | 0.9 | V | ||
| Continuous Source-Drain Diode Current | IS | TC=25 | 1.5 | A | |||
| Body diode reverse recovery time | trr | IF=4A,dI/dt=100A/s | 1.3 | ns | |||
| Body diode reverse recovery charge | Qrr | 6.2 | nC | ||||
| PACKAGE DIMENSIONS | |||||||
| Symbol | Dimensions In Millimeters | Min | Max | Symbol | Dimensions In Inches | Min | Max |
| A | 0.900 | 1.150 | A | 0.035 | 0.045 | ||
| A1 | 0.000 | 0.100 | A1 | 0.000 | 0.004 | ||
| A2 | 0.900 | 1.050 | A2 | 0.035 | 0.041 | ||
| b | 0.300 | 0.500 | b | 0.012 | 0.020 | ||
| c | 0.080 | 0.150 | c | 0.003 | 0.006 | ||
| D | 2.800 | 3.000 | D | 0.110 | 0.118 | ||
| E | 1.200 | 1.400 | E | 0.047 | 0.055 | ||
| E1 | 2.250 | 2.550 | E1 | 0.089 | 0.100 | ||
| e | 1.800 | 2.000 | e | 0.071 | 0.079 | ||
| e1 | 0.950 TYP | e1 | 0.037 TYP | ||||
| L | 0.300 | 0.500 | L | 0.012 | 0.020 | ||
| L1 | 0.550 REF | L1 | 0.022 REF | ||||
| 0 | 8 | 0 | 8 | ||||
Notes:
(1) Repetitive rating: Pulse width limited by junction temperature.
(2) Surface mounted on FR4 board, t 10s.
(3) Pulse Test: Pulse Width 80s, Duty Cycle 0.5%.
(4) Guaranteed by design, not subject to production testing.
2410121433_High-Diode-3402_C22458619.pdf
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