High voltage Darlington array IC HGSEMI MC1413BN with seven silicon NPN pairs and common emitter configuration

Name: High voltage Darlington array IC HGSEMI MC1413BN with seven silicon NPN pairs and common emitter configuration
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: MC1413BN
Availability: InStock

Key Attributes

Model Number: MC1413BN

Product Custom Attributes

Current - Collector(Ic):

500mA

Collector - Emitter Voltage VCEO:

50V

Mfr. Part #:

MC1413BN

Package:

DIP-16

Product Description

Product Overview

The MC1413 is a high-voltage, high-current Darlington array IC composed of seven silicon NPN Darlington pairs. Featuring open-collector outputs with common emitters, each unit includes a ballast resistor and a base-emitter resistor for improved efficiency and reduced leakage. With integrated clamp diodes for inductive loads, this array offers a high output voltage of up to 50V and a collector output current of 500mA per channel. It is directly compatible with TTL, CMOS, and PMOS logic levels, simplifying interface requirements. The MC1413 is ideal for driving solenoids, relays, DC lighting, small motors, and LEDs.

Product Attributes

Brand: HGsemi
Product Series: MC1413

Technical Specifications

Model	Package	Print Name	Packaging	Quantity
MC1413N	DIP-16	MC1413	Tube	1000 pcs/box
MC1413M/TR	SOP-16	MC1413	Tape & Reel	2500 pcs/reel
MC1413MT/TR	TSSOP-16	MC1413	Tape & Reel	2500 pcs/reel
MC1413BN	DIP-16	MC1413B	Tube	1000 pcs/box
MC1413BM/TR	SOP-16	MC1413B	Tape & Reel	2500 pcs/reel
MC1413BMT/TR	TSSOP-16	MC1413B	Tape & Reel	2500 pcs/reel

Electrical Characteristics (Unless otherwise specified: V+=5V, Ta=25)

Symbol	Parameter	Test Condition	Min	Typ	Max	Unit
ICEX	Output Leakage Current	TA= 25C, VCE = 50V (Figure 1)		20		A
		TA= 85C, VCE = 50V (Figure 1)		100		A
VCE(Sat)	CE Saturation Voltage	IC= 350mA, IB = 500A (Figure 3) (Note 3)		1.30	1.6	V
		IC= 200mA, IB = 350A (Figure 3)		1.1	1.3	V
		IC= 100mA, IB = 250A (Figure 3)		0.9	1.1	V
II(ON)	ON State Input Current	VI= 3.85V (Figure 4)		0.93	1.35	mA
II(OFF)	OFF State Input Current	(Note 4) IC= 500A (Figure 5)		50	100	A
		TA= +25C		50	100
		TA= +85C		25	50
VI(ON)	Input Voltage	(Note 5) VCE =2.0V,IC=200mA (Figure 6 )	2.4			V
		VCE =2.0V,IC=250mA (Figure 6 )	2.7			V
		VCE =2.0V,IC=300mA (Figure 6 )	3.0			V
CI	Input Capacitance			15	30	pF
tPLH	Turn-on Delay Time	0.5 VI to 0.5 VO			1.0	s
tPHL	Turn-off Delay Time	0.5 VI to 0.5 VO			1.0	s
IR	Clamp Diode Leakage Current	VR= 50V (Figure 7)		5	10	A
		TA= 25C		5	10
		TA= 85C		10	50
VF	Clamp Diode Forward Voltage Drop	IF= 350mA (Figure 8 )		1.7	2.0	V

Operating Conditions

Parameter	MC1413	MC1413B	Unit
Operating Temperature Range	-20 to 85	-40 to 85

Absolute Maximum Ratings

Parameter	Range	Unit
Input Voltage	-0.3 to 30	V
Output Voltage	55	V
Emitter to Base Breakdown Voltage	6.0	V
Continuous Collector Current	500	mA
Continuous Base Current	25	mA
Storage Temperature	-65 to 150
Junction Temperature Range	-40 to 150
Lead Temperature (Soldering, 10s)	260

Package Dimensions

DIP-16

Symbol	A	B	D	D1	E	L	L1	a	b	c	d	Unit
Min	6.10	18.94	8.10	7.42	3.10	0.50	3.00	1.50	0.85	0.40	2.54 BSC		mm
Max	6.68	19.56	10.9	7.82	3.55	0.70	3.60	1.55	0.90	0.50			mm

SOP-16

Symbol	A	A1	B	C	C1	D	Q	a	b	Unit
Min	1.35	0.05	9.80	5.80	3.80	0.40	0	0.35	1.27 BSC	mm
Max	1.55	0.20	10.0	6.20	4.00	0.80	8	0.45		mm

TSSOP-16

Symbol	A	A1	B	C	C1	D	Q	a	b	Unit
Min	0.85	0.05	4.90	6.20	4.30	0.40	0	0.20	0.65 BSC	mm
Max	0.95	0.20	5.10	6.60	4.50	0.80	8	0.25		mm

2512082058_HGSEMI-MC1413BN_C7432123.pdf

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