Low RDSon N Channel MOSFET HUASHUO HSS2N7002K 60V Fast Switching Suitable for DC DC Converters and Portable Devices
Key Attributes
Model Number:
HSS2N7002K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-40℃~+150℃
RDS(on):
2Ω@4.5V,100mA
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
2pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
38pF@25V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1nC@4.5V
Mfr. Part #:
HSS2N7002K
Package:
SOT-23
Product Description
Product Overview
The HSS2N7002K is a N-Channel 60V Fast Switching MOSFET designed for various electronic applications. It offers low RDS(on) and is ESD protected, making it suitable for low-side load switching, level shift circuits, DC-DC converters, and portable devices such as DSCs, PDAs, and cell phones. This product complies with RoHS requirements and is Halogen Free.
Product Attributes
- Brand: HS-Semi
- Material Compliance: RoHS, Halogen Free
- Feature: ESD Protected
- Feature: Low RDS(on)
- Switching Characteristic: Fast Switching
Technical Specifications
| Part Number | Channel Type | Drain-Source Voltage (VDS) | Continuous Drain Current (ID @ TA=25, VGS=10V) | Continuous Drain Current (ID @ TA=70, VGS=10V) | Pulsed Drain Current (IDM) | Total Power Dissipation (PD @ TA=25) | Storage Temperature Range (TSTG) | Operating Junction Temperature Range (TJ) | RDS(ON),max (VGS=10V, ID=200mA) | Gate Threshold Voltage (VGS(th)) | Drain-Source Leakage Current (IDSS) | Gate-Source Leakage Current (IGSS) | Total Gate Charge (Qg) | Turn-On Delay Time (td(on)) | Rise Time (tr) | Turn-Off Delay Time (td(off)) | Fall Time (tf) | Input Capacitance (Ciss) | Output Capacitance (Coss) | Reverse Transfer Capacitance (Crss) | Continuous Source Current (IS) | Pulsed Source Current (ISM) | Diode Forward Voltage (VSD) | Package | Packaging | Quantity per Reel |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HSS2N7002K | N-Ch | 60 V | 300 mA | 190 mA | 1 A | 0.35 W | -40 to 150 | -40 to 150 | 2 | 1.2 - 2.5 V | 1 uA (VDS=48V, VGS=0V, TJ=25) | 30 uA (VGS=16V, VDS=0V) | 1.0 nC (VDS=0.5V, VGS=10V, ID=200mA) | 2.7 ns | 2.5 ns | 13 ns | 8 ns | 38 pF | 5 pF | 2 pF | 300 mA | 1 A | 0.85 V (IS=0.5A, TJ=25) | SOT-23 | Tape&Reel | 3000 |
2410121531_HUASHUO-HSS2N7002K_C518788.pdf
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