Low Frequency Power Amplifier HL Haolin Elec 2SB562 C PNP Bipolar Junction Transistor in TO92 Package
Key Attributes
Model Number:
2SB562 C
Product Custom Attributes
Current - Collector Cutoff:
1uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
625mW
Type:
PNP
Current - Collector(Ic):
1A
Number:
1 PNP
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SB562 C
Package:
TO-92L
Product Description
Product Overview
The 2SB562 is a PNP bipolar junction transistor designed for low-frequency power amplifier applications. It offers a complementary pair with the 2SD468 and comes in a TO-92 package.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Test Conditions | Value | Unit |
|---|---|---|---|
| V(BR)CBO | IC=-10 µA,IE=0 | -25 | V |
| V(BR)CEO | IC=-1mA,IB=0 | -20 | V |
| V(BR)EBO | IE=-10 µA,IC=0 | -5 | V |
| ICBO | VCB=-20V,IE=0 | -1 | µA |
| IEBO | VEB=-4V,IC=0 | -1 | µA |
| hFE | VCE=-2V,IC=-0.5A | 85-240 | |
| VCE(sat) | IC=-0.8A,IB=-0.08A | -0.5 | V |
| VBE | VCE=-2V,IC=-0.5A | -1 | V |
| fT | VCE=-2V,IC=-0.5A | 350 | MHz |
| Cob | VCB=-10V,IE=0,f=1MHz | 38 | pF |
2410122026_HL-Haolin-Elec-2SB562-C_C2688975.pdf
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