86--136 6733 2386
quality voltage regulation High Diode BZT52B5V1 Zener diode with 500mW dissipation in compact SOD123 package factory
quality voltage regulation High Diode BZT52B5V1 Zener diode with 500mW dissipation in compact SOD123 package factory

voltage regulation High Diode BZT52B5V1 Zener diode with 500mW dissipation in compact SOD123 package

Key Attributes
Model Number: BZT52B5V1
Product Custom Attributes
Mfr. Part #:
BZT52B5V1
Package:
SOD-123
Product Description

Product Overview

The SOD123 series of plastic-encapsulated Zener diodes are designed for voltage stabilizing applications. With a maximum power dissipation of 500mW and a Zener voltage range from 2.4V to 43V, these diodes offer reliable performance for various electronic circuits. They are suitable for applications requiring precise voltage regulation and are available in the compact SOD-123 package.

Product Attributes

  • Brand: HIGH DIODE SEMICONDUCTOR
  • Package Type: SOD-123

Technical Specifications

Item Symbol Unit Conditions Max
Max Power dissipation Pd mW TA=25 500
Zener current IZ mA PV /VZ
Maximum junction temperature Tj
Storage temperature range Tstg -65 to +150
Thermal resistance RJA /W Between junction and ambient (Note 1) 357
Forward voltage VF V IF =10mA 0.9

Zener Voltage Range (BZT52B2V4-BZT52B43)

Type Number Type Code Nominal (V) Min (V) Max (V) Test Current (IZT) (mA) Zener Impedance (ZZT@IZT) () Reverse Current (IR) (A) Temperature Coefficient (mV/C)
BZT52B2V4 2WX 2.4 2.35 2.45 5 600 1.0 -3.5
BZT52B2V7 2W1 2.7 2.65 2.75 5 600 1.0 -3.5
BZT52B3V0 2W2 3.0 2.94 3.06 5 600 1.0 -3.5
BZT52B3V3 2W3 3.3 3.23 3.37 5 600 1.0 -3.5
BZT52B3V6 2W4 3.6 3.53 3.67 5 600 1.0 -3.5
BZT52B3V9 2W5 3.9 3.82 3.98 5 600 1.0 -3.5
BZT52B4V3 2W6 4.3 4.21 4.39 5 600 1.0 -3.5
BZT52B4V7 2W7 4.7 4.61 4.79 5 500 2.0 -3.5
BZT52B5V1 2W8 5.1 5.00 5.20 5 480 2.0 -2.7
BZT52B5V6 2W9 5.6 5.49 5.71 5 400 1.0 -2.0
BZT52B6V2 2WA 6.2 6.08 6.32 5 150 3.0 0.4
BZT52B6V8 2WB 6.8 6.66 6.94 5 80 2.0 1.2
BZT52B7V5 2WC 7.5 7.35 7.65 5 80 1.0 2.5
BZT52B8V2 2WD 8.2 8.04 8.36 5 80 0.7 3.2
BZT52B9V1 2WE 9.1 8.92 9.28 5 100 0.5 3.8
BZT52B10 2WF 10 9.80 10.20 5 150 0.2 4.5
BZT52B11 2WG 11 10.78 11.22 5 150 0.1 5.4
BZT52B12 2WH 12 11.76 12.24 5 150 0.1 6.0
BZT52B13 2WI 13 12.74 13.26 5 170 0.1 7.0
BZT52B15 2WJ 15 14.70 15.30 5 200 0.1 9.2
BZT52B16 2WK 16 15.68 16.32 5 200 0.1 10.4
BZT52B18 2WL 18 17.64 18.36 5 225 0.1 12.4
BZT52B20 2WM 20 19.60 20.40 5 225 0.1 14.4
BZT52B22 2WN 22 21.56 22.44 5 250 0.1 16.4
BZT52B24 2WO 24 23.52 24.48 5 250 0.1 18.4
BZT52B27 2WP 27 26.46 27.54 2 300 0.1 21.4
BZT52B30 2WQ 30 29.40 30.60 2 300 0.1 24.4
BZT52B33 2WR 33 32.34 33.66 2 325 0.1 27.4
BZT52B36 2WS 36 35.28 36.72 2 350 0.1 30.4
BZT52B39 2WT 39 38.22 39.78 2 350 0.1 33.4
BZT52B43 2WU 43 41.16 42.84 2 350 0.1 36.4

Notes

  • 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  • 2. Short duration test pulse used to minimize self-heating effect.
  • 3. f = 1kHz.

Package Outline Dimensions (SOD-123)

Symbol Dimensions In Millimeters (Min) Dimensions In Millimeters (Max) Dimensions In Inches (Min) Dimensions In Inches (Max)
A 1.050 1.250 0.041 0.049
A1 0.000 0.100 0.000 0.004
A2 1.050 1.150 0.041 0.045
b 0.450 0.650 0.018 0.026
c 0.080 0.150 0.003 0.006
D 1.500 1.800 0.059 0.070
E 2.600 2.800 0.102 0.110
E1 3.550 3.850 0.140 0.152
L
L1 0.250 0.450 0.010 0.018
0 8 0 8
(REF) 0.500 0.020

Suggested Pad Layout (SOD-123)

Symbol Dimensions In Millimeters (Min) Dimensions In Millimeters (Max) Dimensions In Inches (Min) Dimensions In Inches (Max)
A 1.050 1.250 0.041 0.049
A1 0.000 0.100 0.000 0.004
A2 1.050 1.150 0.041 0.045
b 0.450 0.650 0.018 0.026
c 0.080 0.150 0.003 0.006
D 1.500 1.800 0.059 0.070
E 2.600 2.800 0.102 0.110
E1 3.550 3.850 0.140 0.152
L
L1 0.250 0.450 0.010 0.018
0 8 0 8
(REF) 0.500 0.020

Reel Taping Specifications For Surface Mount Devices-SOD123

Symbol Dimensions In Millimeters (Min) Dimensions In Millimeters (Max) Dimensions In Inches (Min) Dimensions In Inches (Max)
A 1.050 1.250 0.041 0.049
A1 0.000 0.100 0.000 0.004
A2 1.050 1.150 0.041 0.045
b 0.450 0.650 0.018 0.026
c 0.080 0.150 0.003 0.006
D 1.500 1.800 0.059 0.070
E 2.600 2.800 0.102 0.110
E1 3.550 3.850 0.140 0.152
L
L1 0.250 0.450 0.010 0.018
0 8 0 8
(REF) 0.500 0.020

2511281600_High-Diode-BZT52B5V1_C53058593.pdf

Related Products
quality High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers factory
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
quality NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component factory
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
quality Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor factory
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
quality Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD factory
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.