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quality Compact SOD323 Package High Diode BZT52C15S Zener Diode for Voltage Stabilization Applications factory
quality Compact SOD323 Package High Diode BZT52C15S Zener Diode for Voltage Stabilization Applications factory

Compact SOD323 Package High Diode BZT52C15S Zener Diode for Voltage Stabilization Applications

Key Attributes
Model Number: BZT52C15S
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Impedance(Zzt):
30Ω
Diode Configuration:
Independent
Zener Voltage(Range):
13.8V~15.6V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
15V
Impedance(Zzk):
200Ω
Mfr. Part #:
BZT52C15S
Package:
SOD-323
Product Description

Product Overview

The SOD323 Plastic-Encapsulated Diodes are Zener diodes designed for voltage stabilization. With a maximum power dissipation of 200mW and a Zener voltage range from 2.4V to 43V, these diodes are suitable for various applications requiring stable voltage references. They are available in the compact SOD323 package.

Product Attributes

  • Brand: High Diode Semiconductor
  • Package Type: SOD323

Technical Specifications

Item Symbol Unit Conditions Max
Max Power dissipation Pd mW TA=25 200
Maximum junction temperature Tj 150
Storage temperature range Tstg -65 to +150
Thermal resistance RJA /W Between junction and ambient (Note 1) 625
Forward voltage VF V IF =10mA 0.9

Zener Voltage Range, Impedance, Reverse Current, and Temperature Coefficient

TYPE Marking VZ@IZT Nom(V) VZ@IZT Min(V) VZ@IZT Max(V) IZT (mA) ZZT@IZT () IZK (A) IR (A) VR (V) Typical Temperature Coefficient @IZTC (mV/) Max Power Dissipation (mW) Max Reverse Current (Note 2) (mA)
BZT52C2V4S WX 2.4 2.20 2.60 5 600 50 1.0 -3.5 0 200 5
BZT52C2V7S W1 2.7 2.5 2.9 5 600 20 1.0 -3.5 0 200 5
BZT52C3V0S W2 3.0 2.8 3.2 5 600 10 1.0 -3.5 0 200 5
BZT52C3V3S W3 3.3 3.1 3.5 5 600 5 1.0 -3.5 0 200 5
BZT52C3V6S W4 3.6 3.4 3.8 5 600 5 1.0 -3.5 0 200 5
BZT52C3V9S W5 3.9 3.7 4.1 5 600 3 1.0 -3.5 0 200 5
BZT52C4V3S W6 4.3 4.0 4.6 5 600 3 1.0 -3.5 0 200 5
BZT52C4V7S W7 4.7 4.4 5.0 5 500 3 2.0 -3.5 0.2 200 5
BZT52C5V1S W8 5.1 4.8 5.4 5 480 2 2.0 -2.7 1.2 200 5
BZT52C5V6S W9 5.6 5.2 6.0 5 400 1 2.0 -2 2.5 200 5
BZT52C6V2S WA 6.2 5.8 6.6 5 150 3 4.0 0.4 3.7 200 5
BZT52C6V8S WB 6.8 6.4 7.2 5 80 2 4.0 1.2 4.5 200 5
BZT52C7V5S WC 7.5 7.0 7.9 5 80 1 5.0 2.5 5.3 200 5
BZT52C8V2S WD 8.2 7.7 8.7 5 80 0.7 5.0 3.2 6.2 200 5
BZT52C9V1S WE 9.1 8.5 9.6 5 100 0.5 6.0 3.8 7.0 200 5
BZT52C10S WF 10 9.4 10.6 5 150 0.2 7.0 4.5 8.0 200 5
BZT52C11S WG 11 10.4 11.6 5 150 0.1 8.0 5.4 9.0 200 5
BZT52C12S WH 12 11.4 12.7 5 150 0.1 8.0 6.0 10.0 200 5
BZT52C13S WI 13 12.4 14.1 5 170 0.1 8.0 7.0 11.0 200 5
BZT52C15S WJ 15 13.8 15.6 5 200 0.1 10.5 9.2 13.0 200 5
BZT52C16S WK 16 15.3 17.1 5 200 0.1 11.2 10.4 14.0 200 5
BZT52C18S WL 18 16.8 19.1 5 225 0.1 12.6 12.4 16.0 200 5
BZT52C20S WM 20 18.8 21.2 5 225 0.1 14.0 14.4 18.0 200 5
BZT52C22S WN 22 20.8 23.3 5 250 0.1 15.4 16.4 20.0 200 5
BZT52C24S WO 24 22.8 25.6 5 250 0.1 16.8 18.4 22.0 200 5
BZT52C27S WP 27 25.1 28.9 2 300 0.1 18.9 21.4 25.3 200 2
BZT52C30S WQ 30 28.0 32.0 2 300 0.1 21.0 24.4 29.4 200 2
BZT52C33S WR 33 31.0 35.0 2 325 0.1 23.1 27.4 33.4 200 2
BZT52C36S WS 36 34.0 38.0 2 350 0.1 25.2 30.4 37.4 200 2
BZT52C39S WT 39 37.0 41.0 2 350 0.1 27.3 33.4 41.2 200 2
BZT52C43S WU 43 40.0 46.0 2 700 0.1 32.0 10.0 12.0 200 5

Notes

  1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  2. Short duration test pulse used to minimize self-heating effect.
  3. f = 1kHz.

Package Outline Dimensions

SOD323

Dimension Value (mm)
L 2.9
W 2.0
E 2.4
D 1.25
D1 0.46

Suggested Pad Layout

SOD323

Dimension Value (mm)
A 1.46
B 1.25

Reel Taping Specifications

For Surface Mount Devices-SOD323


2410121255_High-Diode-BZT52C15S_C571390.pdf

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