Load Switching Device High Diode HD2312 N Channel MOSFET with 20V Drain Source Voltage and 5A Current
Key Attributes
Model Number:
HD2312
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-50℃~+150℃
RDS(on):
18mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
450mV
Reverse Transfer Capacitance (Crss@Vds):
55pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
865pF@10V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
HD2312
Package:
SOT-23
Product Description
Product Overview
The HD2312 is a high-performance N-Channel MOSFET in a SOT-23 package, designed for power applications. It features excellent RDS(on) and low gate charge, making it suitable for DC/DC converters and load switching in portable devices. This TrenchFET Power MOSFET offers reliable performance with a Drain-Source Voltage of 20V and a continuous drain current of 5A.
Product Attributes
- Brand: High Diode Semiconductor
- Package Type: SOT-23 Plastic-Encapsulate
- MOSFET Type: N-Channel MOSFET
- Technology: TrenchFET
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | |
| Gate-Source Voltage | VGS | ±8.0 | V | |
| Continuous Drain Current | ID | 5 | A | t=5s |
| Pulsed Drain Current | IDM | 20 | A | |
| Continuous Source-Drain Diode Current | IS | 1.04 | A | |
| Maximum Power Dissipation | PD | 0.35 | W | t=5s |
| Thermal Resistance from Junction to Ambient | RθJA | 357 | °C/W | |
| Junction Temperature | TJ | 150 | °C | |
| Storage Temperature | Tstg | -50 ~+150 | °C | |
| Static Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID =250µA |
| Gate-source leakage | IGSS | ±100 | nA | VDS =0V, VGS =±8V |
| Zero gate voltage drain current | IDSS | 1.0 | µA | VDS =20V, VGS =0V |
| Gate-source threshold voltage | VGS(th) | 0.45 - 1.0 | V | VDS =VGS, ID =250µA |
| Drain-source on-state resistance | RDS (on) | 0.018 - 0.0414 | Ω | VGS =4.5V, ID =5.0A; VGS =1.8V, ID =4.3A; VGS =2.5V, ID =4.7A |
| Forward tranconductance | gfS | 6 | S | VDS =10V, ID =5.0A |
| Input capacitance | Ciss | 865 | pF | VDS =10V,VGS =0V,f =1MHz |
| Output capacitance | Coss | 105 | pF | VDS =10V,VGS =0V,f =1MHz |
| Reverse transfer capacitance | Crss | 55 | pF | VDS =10V,VGS =0V,f =1MHz |
| Gate resistance | Rg | 0.5 - 4.8 | Ω | f =1MHz |
| Turn-on delay Time | td(on) | 10 | ns | VGEN=5V,VDD=10V, ID =4A,RG=1Ω, RL=2.2Ω |
| Rise time | tr | 20 | ns | VGEN=5V,VDD=10V, ID =4A,RG=1Ω, RL=2.2Ω |
| Turn-off Delay time | td(off) | 32 | ns | VGEN=5V,VDD=10V, ID =4A,RG=1Ω, RL=2.2Ω |
| Fall yime | tf | 12 | ns | VGEN=5V,VDD=10V, ID =4A,RG=1Ω, RL=2.2Ω |
| Forward diode voltage | VSD | 0.75 - 1.2 | V | VGS =0V,IS=4A |
2411220614_High-Diode-HD2312_C571349.pdf
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