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quality SOT 23 Package P Channel MOSFET High Diode HD2305 Featuring TrenchFET Technology for Power Circuits factory
quality SOT 23 Package P Channel MOSFET High Diode HD2305 Featuring TrenchFET Technology for Power Circuits factory

SOT 23 Package P Channel MOSFET High Diode HD2305 Featuring TrenchFET Technology for Power Circuits

Key Attributes
Model Number: HD2305
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-50℃~+150℃
RDS(on):
90mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
500mV
Number:
1 P-Channel
Input Capacitance(Ciss):
740pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
HD2305
Package:
SOT-23
Product Description

Product Overview

The HD2305 is a P-Channel MOSFET from High Diode Semiconductor, designed for power applications. This TrenchFET Power MOSFET, available in a SOT-23 package, offers a drain-source voltage of -12V and low on-state resistance. It is suitable for use in load switching for portable devices and DC/DC converters. Key electrical characteristics include a continuous drain current of -4.1A and various on-state resistance values depending on gate-source voltage and temperature. Dynamic characteristics and body diode properties are also detailed.

Product Attributes

  • Brand: High Diode Semiconductor
  • Model: HD2305
  • Type: P-Channel MOSFET
  • Technology: TrenchFET
  • Package: SOT-23 (Plastic-Encapsulated)
  • Marking: S5

Technical Specifications

Parameter Symbol Value Unit Test Condition
Drain-Source Voltage V(BR)DSS -12 V VGS = 0V, ID =-250A
Gate-Source Voltage VGS 8 V
Continuous Drain Current ID -4.1 A
Continuous Source-Drain Diode Current IS -0.8 A
Maximum Power Dissipation PD 0.35 W
Junction Temperature TJ 150
Storage Temperature TSTG -50 ~+150
Gate-Source Threshold Voltage VGS(th) -0.5 ~ -0.9 V VDS =VGS, ID =-250A
Gate-Source Leakage IGSS 100 nA VDS =0V, VGS =8V
Zero Gate Voltage Drain Current IDSS -1 A VDS =-8V, VGS =0V
Drain-Source On-State Resistance RDS(on) 45 m VGS =-4.5V, ID =-3.5A (TA=25)
60 m VGS =-2.5V, ID =-3A (TA=25)
90 m VGS =-1.8V, ID =-2.0A (TA=25)
Forward Transconductance gfs 6 S VDS =-5V, ID =-4.1A (TA=25)
Input Capacitance Ciss 740 pF VDS =-4V,VGS =0V,f =1MHz
Output Capacitance Coss 290 pF VDS =-4V,VGS =0V,f =1MHz
Reverse Transfer Capacitance Crss 190 pF VDS =-4V,VGS =0V,f =1MHz
Total Gate Charge Qg 7.8 ~ 15 nC VDS =-4V,VGS =-4.5V, ID =-4.1A
Gate-Source Charge Qgs 4.5 ~ 9 nC VDS =-4V,VGS =-4.5V, ID =-4.1A
Gate-Drain Charge Qgd 1.2 ~ 1.6 nC VDS =-4V,VGS =-4.5V, ID =-4.1A
Gate Resistance Rg 7 ~ 14 f =1MHz
Turn-on Delay Time td(on) 13 ~ 20 ns VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1
5 ~ 10 ns VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1
13 ~ 20 ns VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1
5 ~ 10 ns VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1
Rise Time tr 35 ~ 53 ns VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1
11 ~ 17 ns VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1
35 ~ 53 ns VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1
11 ~ 17 ns VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1
Turn-off Delay Time td(off) 32 ~ 48 ns VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1
22 ~ 33 ns VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1
32 ~ 48 ns VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1
22 ~ 33 ns VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1
Fall Time tf 10 ~ 20 ns VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1
16 ~ 24 ns VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1
10 ~ 20 ns VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1
16 ~ 24 ns VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1
Continuous Source-Drain Diode Current IS -1.4 A TC=25
Pulse Diode Forward Current ISM -10 A
Body Diode Voltage VSD -1.2 V IF=-3.3A

2410121314_High-Diode-HD2305_C466664.pdf

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