N Channel Fast Switching MOSFET HUASHUO HSMA4086 Ideal for SMPS DC DC Converters and Or Ing Circuits
Key Attributes
Model Number:
HSMA4086
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
330A
Operating Temperature -:
-55℃~+150℃
RDS(on):
0.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
222pF
Number:
1 N-channel
Output Capacitance(Coss):
2.119nF
Input Capacitance(Ciss):
6.81nF
Pd - Power Dissipation:
140W
Gate Charge(Qg):
128nC@10V
Mfr. Part #:
HSMA4086
Package:
LFPRAK-8(5x6)
Product Description
Product Overview
The HSMA4086 is a N-Channel Fast Switching MOSFET designed for high-current applications. It features advanced trench technology, low gate charge, and high current capability, making it suitable for synchronous rectification in SMPS, DC/DC converters, and Or-ing applications. This MOSFET is RoHS and Halogen-Free compliant.
Product Attributes
- Brand: HS-Semi
- Model: HSMA4086
- Channel Type: N-Ch
- Switching Speed: Fast Switching
- Compliance: RoHS and Halogen-Free
- Technology: Advanced Trench Technology
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 40 | -- | -- | V |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=20A | -- | 0.5 | 0.9 | m |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=20A | -- | 0.85 | 1.2 | V |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.2 | V |
| Drain-Source Leakage Current (IDSS) | VDS=32V , VGS=0V , TJ=25 | -- | -- | 1 | uA |
| Drain-Source Leakage Current (IDSS) | VDS=32V , VGS=0V , TJ=55 | -- | -- | 5 | uA |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | -- | -- | 100 | nA |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | -- | 1.3 | -- | |
| Total Gate Charge (Qg) | VDS=20V , VGS=10V , ID=20A | -- | 128 | -- | nC |
| Gate-Source Charge (Qgs) | -- | 17 | -- | ||
| Gate-Drain Charge (Qgd) | -- | 29 | -- | ||
| Turn-On Delay Time (Td(on)) | VDD=20V , VGS=10V , RG=1.5, ID=20A | -- | 22 | -- | ns |
| Rise Time (Tr) | -- | 149 | -- | ||
| Turn-Off Delay Time (Td(off)) | -- | 55 | -- | ||
| Fall Time (Tf) | -- | 17 | -- | ||
| Input Capacitance (Ciss) | VDS=20V , VGS=0V , f=1MHz | -- | 6810 | -- | pF |
| Output Capacitance (Coss) | -- | 2119 | -- | ||
| Reverse Transfer Capacitance (Crss) | -- | 222 | -- | ||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | -- | -- | 100 | A |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | -- | -- | 1.2 | V |
| Reverse Recovery Time (Trr) | IF=20A , di/dt=100A/s , TJ=25 | -- | 77 | -- | nS |
| Reverse Recovery Charge (Qrr) | -- | 91 | -- | nC | |
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | -- | -- | 330 | A |
| Continuous Drain Current (ID@TC=100) | VGS @ 10V | -- | -- | 200 | A |
| Continuous Drain Current (ID@TA=25) | VGS @ 10V | -- | -- | 45 | A |
| Continuous Drain Current (ID@TA=100) | VGS @ 10V | -- | -- | 35 | A |
| Pulsed Drain Current (IDM) | -- | -- | 530 | A | |
| Single Pulse Avalanche Energy (EAS) | -- | -- | 580 | mJ | |
| Avalanche Current (IAS) | -- | -- | 106 | A | |
| Total Power Dissipation (PD@TC=25) | -- | -- | 140 | W | |
| Total Power Dissipation (PD@TA=25) | -- | -- | 2.5 | W | |
| Storage Temperature Range (TSTG) | -55 | -- | 150 | ||
| Operating Junction Temperature Range (TJ) | -55 | -- | 150 | ||
| Thermal Resistance Junction-Ambient (RJA) | -- | -- | 50 | /W | |
| Thermal Resistance Junction-Case (RJC) | -- | -- | 0.9 | /W |
2410122027_HUASHUO-HSMA4086_C28314527.pdf
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