Low On Resistance N Channel MOSFET HUAKE SMF10N60 Suitable for High Frequency Switching Applications
Key Attributes
Model Number:
SMF10N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
750mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Output Capacitance(Coss):
135pF
Input Capacitance(Ciss):
1.132nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
19.4nC@10V
Mfr. Part #:
SMF10N60
Package:
TO-220F
Product Description
Product Overview
The SMF10N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering a typical on-resistance of 0.75 at VGS=10V and a continuous drain current of 10.0A at 25C.
Product Attributes
- Brand: HUAKE semiconductors
- Product Type: N-Channel MOSFET
- Model: SMF10N60
- Date: 2017.08
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 600 | V | |||
| Drain Current - Continuous (Tc=25C) | ID | 10.0* | A | |||
| Drain Current - Continuous (Tc=100C) | ID | 6.0* | A | |||
| Drain Current - Pulsed (Note1) | IDM | 40* | A | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Single Pulsed Avalanche Energy (Note2) | EAS | 713 | mJ | |||
| Avalanche Current (Note1) | IAR | 10.0 | A | |||
| Repetitive Avalanche Energy (Note1) | EAR | 17.8 | mJ | |||
| Peak Diode Recovery dv/dt (Note3) | dv/dt | 4.5 | V/ns | |||
| Power Dissipation (TC =25C) | PD | 50 | W | |||
| Derate above 25C | 0.4 | W/C | ||||
| Operating Junction Temperature | Tj | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case | RJC | 2.5 | C /W | |||
| Thermal Resistance, Junction to Ambient | RJA | 62.5 | C /W | |||
| Off Characteristics | ||||||
| Drain-source Breakdown Voltage | BVDSS | VGS=0V ,ID=250A | 600 | -- | -- | V |
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | ID=250A (Referenced to 25C) | -- | 0.7 | -- | V/C |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V | -- | -- | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=480V,Tc=125C | -- | -- | 10 | A |
| Gate-Body Leakage Current, Forward | IGSSF | VGS=+30V, VDS=0V | -- | -- | 100 | nA |
| Gate-Body Leakage Current, Reverse | IGSSR | VGS=-30V, VDS=0V | -- | -- | -100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 2.0 | -- | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10 V, ID=5.0A | -- | 0.75 | 0.95 | |
| Forward Transconductance | gFS | VDS=40 V, ID=5.0A (Note4) | -- | 6.2 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHz | -- | 1132 | -- | pF |
| Output Capacitance | Coss | -- | 135 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 20 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD = 300 V, ID = 10 A, RG = 25 (Note4,5) | -- | 33 | -- | ns |
| Turn-On Rise Time | tr | -- | 60 | -- | ns | |
| Turn-Off Delay Time | td(off) | -- | 59 | -- | ns | |
| Turn-Off Fall Time | tf | -- | 39 | -- | ns | |
| Total Gate Charge | Qg | VDS = 480 V, ID =10 A, VGS = 10 V (Note4,5) | -- | 19.4 | -- | nC |
| Gate-Source Charge | Qgs | -- | 6.26 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 6.55 | -- | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | -- | -- | 10 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | -- | -- | 40 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS =0V,IS=10.0A | -- | -- | 1.3 | V |
| Reverse Recovery Time | trr | VGS =0V, IS=10.0A, d IF /dt=100A/s (Note4) | -- | 425 | -- | ns |
| Reverse Recovery Charge | Qrr | -- | 4.31 | -- | C | |
2410122013_HUAKE-SMF10N60_C570139.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
