N Channel MOSFET HUAKE SMF18N50 500V 18A TO 220F Package Suitable for High Frequency Power Circuits
Key Attributes
Model Number:
SMF18N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
18A
RDS(on):
350mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.62nF@25V
Pd - Power Dissipation:
60W
Gate Charge(Qg):
45nC
Mfr. Part #:
SMF18N50
Package:
TO-220F
Product Description
Product Overview
The SMF18N50 is a 500V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, with a typical RDS(on) of 270m@VGS=10V.
Product Attributes
- Brand: HUAKE semiconductors
- Product Type: N-Channel MOSFET
- Package: TO-220F
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDSS | 500 | V | |||
| ID | Tc=25C | 18.0* | A | |||
| ID | Tc=100C | 11.38* | A | |||
| IDM | Pulsed (Note1) | 72* | A | |||
| VGSS | 30 | V | ||||
| EAS | Single Pulsed Avalanche Energy (Limit Reference Value) (Note2) | 862 | mJ | |||
| dv/dt | Peak Diode Recovery (Note3) | 4.5 | V/ns | |||
| Electrical Characteristics | BVDSS | VGS=0V ,ID=250A | 500 | -- | -- | V |
| IDSS | VDS=500V,VGS=0V | -- | -- | 1 | A | |
| IGSSF | VGS=+30V, VDS=0V | -- | -- | 100 | nA | |
| IGSSR | VGS=-30V, VDS=0V | -- | -- | -100 | nA | |
| VGS(th) | VDS= VGS, ID=250A | 2.0 | -- | 4.0 | V | |
| On-Characteristics | RDS(on) | VGS=10 V, ID=9.0A | -- | 270 | 350 | m |
| gFS | VDS=20 V, ID=9.0A (Note4) | -- | 14 | -- | S | |
| Qg | VDS = 400 V, ID =18 A, VGS = 10 V (Note4,5) | -- | 45 | -- | nC | |
| Dynamic Characteristics | Ciss | VDS=25V,VGS=0V, f=1.0MHz | -- | 2620 | -- | pF |
| Coss | -- | 243 | -- | pF | ||
| Crss | -- | 9.5 | -- | pF | ||
| Switching Characteristics | td(on) | VDD = 250 V, ID = 18 A, RG = 25 (Note4,5) | -- | 65 | -- | ns |
| tr | -- | 165 | -- | ns | ||
| td(off) | -- | 95 | -- | ns | ||
| tf | -- | 90 | -- | ns | ||
| Drain-Source Diode Characteristics | IS | -- | -- | 18 | A | |
| ISM | Maximum Pulsed | -- | -- | 72 | A | |
| VSD | VGS =0V,IS=18 A | -- | -- | 1.4 | V | |
| Thermal Characteristics | RJC | 2.08 | C /W | |||
| Thermal Characteristics | RJA | 62.5 | C /W |
2410121937_HUAKE-SMF18N50_C19725789.pdf
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