Single N Channel Enhancement Mode MOSFET HUAYI HY1506C2 Featuring Low RDS ON and High Current Rating
Key Attributes
Model Number:
HY1506C2
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
48A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
142pF
Number:
1 N-channel
Output Capacitance(Coss):
187pF
Input Capacitance(Ciss):
2.286nF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
52.6nC
Mfr. Part #:
HY1506C2
Package:
TDSON-8(5.2x5.9)
Product Description
HUAYI HY1506C2 Single N-Channel Enhancement Mode MOSFET
The HUAYI HY1506C2 is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers reliable and rugged performance with a 60V/48A rating, low RDS(ON) of 10.5m (typ.) at VGS = 10V, and 100% avalanche tested. Halogen-free devices are available.
Product Attributes
- Brand: HUAYI
- Model: HY1506C2
- Material: Halogen-Free Devices Available
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | V | - | - | 60 |
| Gate-Source Voltage | VGSS | V | - | ±20 | - | |
| Maximum Junction Temperature | TJ | °C | - | - | 150 | |
| Storage Temperature Range | TSTG | °C | -55 | - | 150 | |
| Source Current-Continuous (Body Diode) | IS | Tc=25°C | A | - | - | 48 |
| Pulsed Drain Current | IDM | Tc=25°C | A | - | - | 150 |
| Continuous Drain Current | ID | Tc=25°C | A | - | - | 48 |
| Continuous Drain Current | ID | Tc=100°C | A | - | - | 30 |
| Maximum Power Dissipation | PD | Tc=25°C | W | - | - | 48 |
| Maximum Power Dissipation | PD | Tc=100°C | W | - | - | 19 |
| Thermal Resistance, Junction-to-Case | RTJC | °C/W | - | 2.6 | - | |
| Thermal Resistance, Junction-to-Ambient | RTJA | Mounted on Large Heat Sink | °C/W | - | 45 | - |
| Single Pulsed-Avalanche Energy | EAS | L=0.1mH | mJ | - | 106 | - |
| Electrical Characteristics (Tc =25°C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250μA | V | 60 | - | - |
| Drain-to-Source Leakage Current | IDSS | VDS=60V,VGS=0V | μA | - | - | 1 |
| Drain-to-Source Leakage Current | IDSS | Tj=125°C | μA | - | - | 50 |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250μA | V | 1 | 1.9 | 3 |
| Gate-Source Leakage Current | IGSS | VGS=±20V,VDS=0V | nA | - | - | ±100 |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | mΩ | - | 10.5 | 13 |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=20A | mΩ | - | 12.2 | 15 |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | V | - | 0.8 | 1.2 |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/μs | ns | - | 23 | - |
| Reverse Recovery Charge | Qrr | nC | - | 58 | - | |
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | Ω | - | 1.2 | - |
| Input Capacitance | Ciss | VGS=0V, VDS=48V, Frequency=1.0MHz | pF | - | 2286 | - |
| Output Capacitance | Coss | pF | - | 187 | - | |
| Reverse Transfer Capacitance | Crss | pF | - | 142 | - | |
| Turn-on Delay Time | td(ON) | VDD=20V,RG=4Ω, IDS=20A,VGS=10V | ns | - | 13 | - |
| Turn-on Rise Time | Tr | ns | - | 14 | - | |
| Turn-off Delay Time | td(OFF) | ns | - | 43 | - | |
| Turn-off Fall Time | Tf | ns | - | 13 | - | |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS =48V, VGS=10V, ID=20A | nC | - | 52.6 | - |
| Gate-Source Charge | Qgs | nC | - | 6.4 | - | |
| Gate-Drain Charge | Qgd | nC | - | 15.3 | - | |
2410121248_HUAYI-HY1506C2_C2827225.pdf
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