Fast Switching MOSFET HUASHUO HSBB8066 N Channel 80V with Low Gate Charge and High Current Capability
Key Attributes
Model Number:
HSBB8066
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Output Capacitance(Coss):
317pF
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
1.738nF
Gate Charge(Qg):
29nC@10V
Mfr. Part #:
HSBB8066
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB8066 is a N-Channel, 80V fast switching MOSFET designed for high-frequency switching applications, synchronous rectification, DC/DC converters, and motor drivers. It features advanced high cell density Trench technology, offering super low gate charge, excellent CdV/dt effect decline, and is 100% EAS guaranteed. This MOSFET is available as a Green Device.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced high cell density Trench technology
- Green Device Available
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSBB8066 | Drain-Source Voltage (VDS) | 80 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID) @ TC=25, VGS @ 10V | 50 | A | ||||
| Continuous Drain Current (ID) @ TC=100, VGS @ 10V | 33 | A | ||||
| Pulsed Drain Current (IDM) | 200 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 45 | mJ | ||||
| Avalanche Current (IAS) | 30 | A | ||||
| Total Power Dissipation (PD) @ TC=25 | 45 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 55 | /W | |||
| HSBB8066 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 80 | --- | --- | V |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=10A | --- | 8.7 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=10A | --- | 13 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | --- | 2.3 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=64V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA | |
| Forward Transconductance (gfs) | VDS=5V , ID=20A | --- | 70 | --- | S | |
| Total Gate Charge (Qg) (10V) | VDS=40V , VGS=10V , ID=10A | --- | 29 | --- | nC | |
| Turn-On Delay Time (Td(on)) | VDD=40V , VGS=10V , RG=3.3, ID=10A | --- | 6.3 | --- | ns | |
| Rise Time (Tr) | --- | 19 | --- | ns | ||
| Turn-Off Delay Time (Td(off)) | --- | 9.4 | --- | ns | ||
| Fall Time (Tf) | --- | 36 | --- | ns | ||
| HSBB8066 | Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | 50 | A |
| Diode Forward Voltage (VSD) | VGS=0V , IS=A , TJ=25 | --- | --- | 1.2 | V | |
| Reverse Recovery Time (trr) | IF=10A , dI/dt=100A/s , TJ=25 | --- | 35 | --- | nS |
| Package | Packaging | Quantity |
|---|---|---|
| PRPAK3*3 | Tape&Reel | 3000 |
2410122026_HUASHUO-HSBB8066_C22359235.pdf
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