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quality Single N Channel Enhancement Mode MOSFET HUAYI HYG025N04NR1D 40V 157A Low RDS ON Typical Device factory
quality Single N Channel Enhancement Mode MOSFET HUAYI HYG025N04NR1D 40V 157A Low RDS ON Typical Device factory

Single N Channel Enhancement Mode MOSFET HUAYI HYG025N04NR1D 40V 157A Low RDS ON Typical Device

Key Attributes
Model Number: HYG025N04NR1D
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
157A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.4mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
696pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.31nF
Output Capacitance(Coss):
804pF
Pd - Power Dissipation:
107W
Gate Charge(Qg):
107nC@10V
Mfr. Part #:
HYG025N04NR1D
Package:
TO-252-2L
Product Description

Product Overview

The HYG025N04NR1D is a single N-Channel enhancement mode MOSFET designed for various applications. It features a 40V/157A rating with a low RDS(ON) of 2m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available. It is suitable for load switch and battery protection applications.

Product Attributes

  • Brand: HYG
  • Origin: China
  • Certifications: RoHS compliant, Halogen-free

Technical Specifications

Part NumberVDSS (V)ID (A) @ Tc=25RDS(ON) (m) @ VGS=10VPackageFeatures
HYG025N04NR1D401572.0 (typ.)TO-252-2LSingle N-Channel, Enhancement Mode, 100% Avalanche Tested, Reliable, Rugged

2411220537_HUAYI-HYG025N04NR1D_C19268962.pdf

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