P Channel MOSFET HUASHUO HSBA0139 with Low Gate Charge and Excellent Continuous Drain Current Rating
Key Attributes
Model Number:
HSBA0139
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
42mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
125pF
Number:
1 P-Channel
Output Capacitance(Coss):
223pF
Input Capacitance(Ciss):
6.516nF
Pd - Power Dissipation:
83W
Gate Charge(Qg):
92nC@10V
Mfr. Part #:
HSBA0139
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA0139 is a P-Channel 100V Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability.
Product Attributes
- Brand: HS-SMEI
- Technology: Advanced Trench MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|---|---|
| HSBA0139 | Drain-Source Voltage (VDS) | -100 | V | ||||
| Gate-Source Voltage (VGS) | ±20 | V | |||||
| Continuous Drain Current (ID) @ TC=25 | VGS @ -10V | -30 | A | ||||
| Continuous Drain Current (ID) @ TC=100 | VGS @ -10V | -19 | A | ||||
| Continuous Drain Current (ID) @ TA=25 | VGS @ -10V | -8 | A | ||||
| Continuous Drain Current (ID) @ TA=100 | VGS @ -10V | -6.5 | A | ||||
| Pulsed Drain Current (IDM) | -45 | A | |||||
| Single Pulse Avalanche Energy (EAS) | 345 | mJ | |||||
| Avalanche Current (IAS) | -28 | A | |||||
| Total Power Dissipation (PD) @ TC=25 | 83 | W | |||||
| Storage Temperature Range (TSTG) | -55 | 150 | |||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -100 | V | ||||
| Static Drain-Source On-Resistance (RDS(ON),typ) | VGS=-10V , ID=-10A | 42 | 50 | mΩ | |||
| HSBA0139 | Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-8A | 46 | 55 | mΩ | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.2 | -1.8 | -2.5 | V | ||
| HSBA0139 | Drain-Source Leakage Current (IDSS) | VDS=-100V , VGS=0V , TJ=25 | -50 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | ±100 | nA | ||||
| HSBA0139 | Forward Transconductance (gfs) | VDS=-10V , ID=-10A | 32 | S | |||
| Total Gate Charge (Qg) | VDS=-80V , VGS=-10V , ID=-14A | 92 | nC | ||||
| HSBA0139 | Gate-Source Charge (Qgs) | 17.5 | |||||
| Gate-Drain Charge (Qgd) | 14 | ||||||
| HSBA0139 | Turn-On Delay Time (Td(on)) | VDD=-50V , VGS=-10V , RG=3.3Ω, ID=-14A | 20.5 | ns | |||
| Rise Time (Tr) | 32.2 | ns | |||||
| HSBA0139 | Turn-Off Delay Time (Td(off)) | 123 | ns | ||||
| Fall Time (Tf) | 63.7 | ns | |||||
| HSBA0139 | Input Capacitance (Ciss) | VDS=-25V , VGS=0V , f=1MHz | 6516 | pF | |||
| Output Capacitance (Coss) | 223 | pF | |||||
| Reverse Transfer Capacitance (Crss) | 125 | pF | |||||
| HSBA0139 | Continuous Source Current (IS) | VG=VD=0V , Force Current | -30 | A | |||
| Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | 1.2 | V | ||||
| HSBA0139 | Reverse Recovery Time (trr) | IF=-14A , di/dt=-100A/µs , TJ=25 | 31.2 | nS | |||
| Reverse Recovery Charge (Qrr) | 31.97 | nC | |||||
| HSBA0139 | Thermal Resistance Junction-Ambient (RθJA) | --- | 62 | °C/W | |||
| Thermal Resistance Junction-Case (RθJC) | --- | 1.22 | °C/W | ||||
| HSBA0139 | Package | PRPAK5*6 | |||||
| HSBA0139 | Packaging | 3000/Tape&Reel |
2410121642_HUASHUO-HSBA0139_C845606.pdf
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