Complementary MOSFET N Channel and P Channel HUAYI HYG170C03LR1S Suitable for Synchronous Rectifiers
Key Attributes
Model Number:
HYG170C03LR1S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9.5A
Operating Temperature -:
-55℃~+175℃
RDS(on):
30mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
86pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
1.21nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
18.5nC@10V
Mfr. Part #:
HYG170C03LR1S
Package:
SOP-8
Product Description
Product Overview
The HYG170C03LR1S is a complementary MOSFET featuring N-Channel and P-Channel devices. It offers high performance with low on-resistance and is 100% avalanche tested for reliability. This product is available in Halogen Free and Green (RoHS Compliant) versions and is suitable for applications such as Synchronous Rectifiers, Wireless Power, and H-bridge Motor Drives.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Certifications: RoHS Compliant, Halogen Free
- Package: SOP8L
Technical Specifications
| Model | Type | Vds | Id (Vgs=10V/ -10V) | Rds(on) (Vgs=10V/ -10V) | Rds(on) (Vgs=4.5V/ -4.5V) | Avalanche Tested | Features |
| HYG170C03LR1S | N-Channel | 30V | 9.5 A | 12.9 m | 19.3 m | 100% | Reliable and Rugged, Halogen Free and Green Devices Available |
| HYG170C03LR1S | P-Channel | -30V | -8 A | 21.6 m | 40.0 m | 100% | Reliable and Rugged, Halogen Free and Green Devices Available |
2410121257_HUAYI-HYG170C03LR1S_C2687416.pdf
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