N Channel Enhancement Mode MOSFET HUAYI HY3712P Featuring Low On Resistance and High Current Capacity
Key Attributes
Model Number:
HY3712P
Product Custom Attributes
Drain To Source Voltage:
125V
Current - Continuous Drain(Id):
170A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
509pF
Number:
1 N-channel
Output Capacitance(Coss):
980pF
Input Capacitance(Ciss):
8.162nF
Pd - Power Dissipation:
339W
Gate Charge(Qg):
189nC@10V
Mfr. Part #:
HY3712P
Package:
TO-220FB
Product Description
Product Overview
The HY3712 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a voltage rating of 125V and a continuous current of 170A, featuring a low on-resistance of 6.3 m (typ.) at VGS=10V. This device is reliable, rugged, and available in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Material: Molding compounds/die attach materials and 100% matte tin plate finish (for lead-free products)
Technical Specifications
| Model | Package | VDSS (V) | ID (A) @ TC=25C | ID (A) @ TC=100C | RDS(ON) (m) @ VGS=10V, IDS=85A | EAS (mJ) @ L=0.5mH | VGS(th) (V) | Qg (nC) |
| HY3712P/M/B/PS/PM | TO-3PM-3S | 125 | 170 | 124 | 6.3 (typ.) | 585** | 2.0-4.0 | 189 |
| HY3712P/M/B/PS/PM | TO-3PS-3L | 125 | 170 | 124 | 6.3 (typ.) | 585** | 2.0-4.0 | 189 |
| HY3712P/M/B/PS/PM | TO-263-2L | 125 | 170 | 124 | 6.3 (typ.) | 585** | 2.0-4.0 | 189 |
| HY3712P/M/B/PS/PM | TO-220FB-3M | 125 | 170 | 124 | 6.3 (typ.) | 585** | 2.0-4.0 | 189 |
| HY3712P/M/B/PS/PM | TO-220FB-3L | 125 | 170 | 124 | 6.3 (typ.) | 585** | 2.0-4.0 | 189 |
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| VDSS | VGS=0V, IDS=250A | - | - | 125 | V |
| IDSS | VDS=125V, VGS=0V | - | - | 1 | A |
| IDSS @ TJ=85C | VDS=125V, VGS=0V | - | - | 10 | A |
| VGS(th) | VDS=VGS, IDS=250A | 2.0 | 3.0 | 4.0 | V |
| IGSS | VGS=25V, VDS=0V | - | - | 100 | nA |
| RDS(ON) | VGS=10V, IDS=85A | - | 6.3 | 7.5 | m |
| VSD | ISD=85A, VGS=0V | - | 0.8 | 1.0 | V |
| trr | - | - | 70 | - | ns |
| Qrr | ISD=85A, dlSD/dt=100A/s | - | 110 | - | nC |
| RG | VGS=0V,VDS=0V,F=1MHz | - | 3.0 | - | |
| Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 8162 | - | pF |
| Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 980 | - | pF |
| Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 509 | - | pF |
| td(ON) | VDD=62.5 V, RG= 6 , IDS =85A, VGS=10V, | - | 35 | - | ns |
| Tr | - | 52 | - | ||
| td(OFF) | - | 95 | - | ||
| Tf | - | 52 | - | ||
| Qg | VDS=100V, VGS=10V, IDS=85A | - | 189 | - | nC |
| Qgs | VDS=100V, VGS=10V, IDS=85A | - | 29 | - | nC |
| Qgd | VDS=100V, VGS=10V, IDS=85A | - | 70 | - | nC |
2410121713_HUAYI-HY3712P_C2986713.pdf
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