High cell density trench technology N channel MOSFET HSBA20N15S with excellent switching performance
Key Attributes
Model Number:
HSBA20N15S
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+150℃
RDS(on):
56mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
6pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
1.09nF@75V
Pd - Power Dissipation:
72.6W
Gate Charge(Qg):
19nC@4.5V
Mfr. Part #:
HSBA20N15S
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA20N15S is a high-performance N-channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. This fast-switching MOSFET is designed with advanced high cell density Trench technology, providing super low gate charge and excellent Cdv/dt effect decline. It meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch Fast Switching MOSFETs
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS and Green Product requirement
- Reliability: 100% EAS guaranteed with full function reliability approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSBA20N15S | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 150 | --- | --- | V |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=10A | --- | --- | 56 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=10A | --- | --- | 68 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=120V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=120V , VGS=0V , TJ=55 | --- | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA | |
| Forward Transconductance (gfs) | VDS=5V , ID=10A | --- | 33 | --- | S | |
| Total Gate Charge (Qg) | VDS=75V , VGS=4.5V , ID=10A | --- | 19 | --- | nC | |
| Gate-Source Charge (Qgs) | --- | 4.5 | --- | nC | ||
| Gate-Drain Charge (Qgd) | --- | 2.6 | --- | nC | ||
| Input Capacitance (Ciss) | VDS=75V , VGS=0V , f=1MHz | --- | 1090 | --- | pF | |
| HSBA20N15S | Output Capacitance (Coss) | --- | 93 | --- | pF | |
| Reverse Transfer Capacitance (Crss) | --- | 6 | --- | pF | ||
| HSBA20N15S | Continuous Drain Current (ID) @ TC=25 | VGS @ 10V | --- | --- | 23 | A |
| Continuous Drain Current (ID) @ TC=100 | VGS @ 10V | --- | --- | 16 | A | |
| Pulsed Drain Current (IDM) | --- | --- | 60 | A | ||
| HSBA20N15S | Single Pulse Avalanche Energy (EAS) | --- | --- | 53 | mJ | |
| Avalanche Current (IAS) | --- | --- | 18 | A | ||
| HSBA20N15S | Total Power Dissipation (PD) @ TC=25 | --- | --- | 72.6 | W | |
| Total Power Dissipation (PD) @ TA=25 | --- | --- | 2.1 | W | ||
| HSBA20N15S | Storage Temperature Range (TSTG) | -55 | --- | 150 | ||
| Operating Junction Temperature Range (TJ) | -55 | --- | 150 | |||
| HSBA20N15S | Thermal Resistance Junction-ambient (RJA) | --- | --- | 60 | /W | |
| Thermal Resistance Junction-Case (RJC) | --- | --- | 1.72 | /W | ||
| HSBA20N15S | Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | 23 | A |
| Pulsed Source Current (ISM) | --- | --- | 60 | A | ||
| HSBA20N15S | Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
Ordering Information:
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBA20N15S | PRPAK5*6 | 3000/Tape&Reel |
2410121656_HUASHUO-HSBA20N15S_C701044.pdf
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