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quality 100V N Channel MOSFET HUASHUO HSY0076A Featuring Trench Technology for Motor Drivers and UPS factory
quality 100V N Channel MOSFET HUASHUO HSY0076A Featuring Trench Technology for Motor Drivers and UPS factory

100V N Channel MOSFET HUASHUO HSY0076A Featuring Trench Technology for Motor Drivers and UPS

Key Attributes
Model Number: HSY0076A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
320A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.9mΩ@10V,90A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
388pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
333W
Input Capacitance(Ciss):
13.37nF@50V
Gate Charge(Qg):
215nC@10V
Mfr. Part #:
HSY0076A
Package:
TOLL
Product Description

Product Overview

The HSY0076A is a N-Channel, 100V fast switching MOSFET designed for high-efficiency power applications. It features super low RDS(ON) and advanced high cell density Trench technology, ensuring superior performance. This MOSFET is 100% EAS guaranteed and available as a Green Device. Key applications include motor drivers, UPS systems, power tools, and synchronous rectification in SMPS.

Product Attributes

  • Brand: HS-Semi
  • Model: HSY0076A
  • Technology: Trench
  • Channel Type: N-Channel
  • Device Type: MOSFET
  • Availability: Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1,6 320 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1,6 224 A
IDM Pulsed Drain Current2 1000 A
EAS Single Pulse Avalanche Energy3 850 mJ
IAS Avalanche Current 40 A
PD@TC=25 Total Power Dissipation4 333 W
TSTG Storage Temperature Range -55 175
TJ Operating Junction Temperature Range -55 175
Thermal Data
RJA Thermal Resistance Junction-Ambient 1 40 /W
RJC Thermal Resistance Junction-Case1 0.45 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=90A 1.6 1.9 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.0 4.0 V
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25 1 uA
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=125 100 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
gfs Forward Transconductance VDS=5V , ID=20A 75 S
Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=90A 215 nC
Qgs Gate-Source Charge 58 nC
Qgd Gate-Drain Charge 52 nC
Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.0, ID=20A 47 ns
Tr Rise Time 28 ns
Td(off) Turn-Off Delay Time 79 ns
Tf Fall Time 18 ns
Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz 13370 pF
Coss Output Capacitance 1920 pF
Crss Reverse Transfer Capacitance 388 pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current 100 A
VSD Diode Forward Voltage2 VGS=0V , IS=50A , TJ=25 1.1 V
trr Reverse Recovery Time IF=20A , dI/dt=100A/s , TJ=25 70 nS
Qrr Reverse Recovery Charge 580 nC

2410121655_HUASHUO-HSY0076A_C5341711.pdf

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