N Channel 40V Fast Switching MOSFET HUASHUO HSBA4086 with Low Gate Charge and High Current Capability
Key Attributes
Model Number:
HSBA4086
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
230A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
222pF
Number:
1 N-channel
Output Capacitance(Coss):
2.119nF
Input Capacitance(Ciss):
6.81nF
Pd - Power Dissipation:
90W
Gate Charge(Qg):
128nC@10V
Mfr. Part #:
HSBA4086
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA4086 is a high-performance N-Channel 40V Fast Switching MOSFET designed for demanding applications. Featuring advanced trench technology, it offers low gate charge, high current capability, and fast switching characteristics. This MOSFET is ideal for use in Switch Mode Power Supplies (SMPS) for synchronous rectification, DC/DC converters, and Or-ing applications. It is RoHS and Halogen-Free compliant.Product Attributes
- Brand: HS-Semi
- Type: N-Channel MOSFET
- Voltage Rating: 40V
- Switching Speed: Fast
- Compliance: RoHS and Halogen-Free
- Technology: Advanced Trench Technology
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSBA4086 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 40 | --- | --- | V |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=20A | --- | 0.8 | 1.2 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=20A | --- | 1.2 | 2.0 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.2 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=32V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=32V , VGS=0V , TJ=55 | --- | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA | |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | --- | 1.3 | --- | ||
| Total Gate Charge (Qg) | VDS=20V , VGS=10V , ID=20A | --- | 128 | --- | nC | |
| Total Gate Charge (Qg) | VGS=4.5V | --- | 67 | --- | nC | |
| Gate-Source Charge (Qgs) | VDS=20V , VGS=10V , ID=20A | --- | 17 | --- | nC | |
| Gate-Drain Charge (Qgd) | VDS=20V , VGS=10V , ID=20A | --- | 29 | --- | nC | |
| Absolute Maximum Ratings | Drain-Source Voltage (VDS) | --- | --- | --- | 40 | V |
| Gate-Source Voltage (VGS) | --- | --- | --- | 20 | V | |
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | --- | --- | 230 | A | |
| Continuous Drain Current (ID@TC=100) | VGS @ 10V | --- | --- | 140 | A | |
| Thermal Data | Thermal Resistance Junction-Ambient (RJA) | --- | --- | --- | 63 | /W |
| Thermal Resistance Junction-Case (RJC) | --- | --- | --- | 1.4 | /W | |
| Total Power Dissipation (PD@TC=25) | --- | --- | --- | 90 | W | |
| Storage Temperature Range (TSTG) | --- | -55 | --- | 150 |
2410121653_HUASHUO-HSBA4086_C2987714.pdf
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