86--136 6733 2386
quality Power Switching N Channel MOSFET HUAYI HY1420P with Low On Resistance and RoHS Compliant Green Device factory
quality Power Switching N Channel MOSFET HUAYI HY1420P with Low On Resistance and RoHS Compliant Green Device factory

Power Switching N Channel MOSFET HUAYI HY1420P with Low On Resistance and RoHS Compliant Green Device

Key Attributes
Model Number: HY1420P
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
36A
Operating Temperature -:
-55℃~+175℃
RDS(on):
57mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
3.8V
Reverse Transfer Capacitance (Crss@Vds):
24pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.444nF
Pd - Power Dissipation:
180W
Gate Charge(Qg):
53nC@10V
Mfr. Part #:
HY1420P
Package:
TO-220FB-3L
Product Description

Product Overview

The HY1420P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 200V and a continuous drain current of 36A, with a low on-resistance of 57m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available. It is suitable for use in Uninterruptible Power Supplies and other power switching circuits.

Product Attributes

  • Brand: HY1420P/B
  • Origin: Xi'an Huayi Microelectronics Co., Ltd.
  • Certifications: RoHS Compliant, Lead-Free, Green Devices Available

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Absolute Maximum Ratings
Drain-Source VoltageVDSSTc=25C Unless Otherwise Noted--200V
Gate-Source VoltageVGSS--±20V
Maximum Junction TemperatureTJ---175°C
Storage Temperature RangeTSTG--55-175°C
Source Current-Continuous (Body Diode)ISTc=25C, Mounted on Large Heat Sink--36A
Pulsed Drain CurrentIDMTc=25C, * Repetitive ratingpulse width limited by max. junction temperature.--150A
Continuous Drain CurrentIDTc=25C--36A
Continuous Drain CurrentIDTc=100C--25A
Maximum Power DissipationPDTc=25C--180W
Maximum Power DissipationPDTc=100C--90W
Thermal Resistance, Junction-to-CaseRθJC--0.83-°C/W
Thermal Resistance, Junction-to-AmbientRθJA** Surface mounted on FR-4 board.--62°C/W
Single Pulsed-Avalanche EnergyEAS*** Limited by TJmax , starting TJ=25C, L = 0.3mH, VDS=100V, VGS =10V.-273-mJ
Electrical Characteristics (Tc =25C Unless Otherwise Noted)
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS=250µA200--V
Drain-to-Source Leakage CurrentIDSSVDS=200V,VGS=0V--1.0µA
Drain-to-Source Leakage CurrentIDSSTJ=125°C--50µA
Gate Threshold VoltageVGS(th)VDS=VGS, IDS=250µA3.03.85.0V
Gate-Source Leakage CurrentIGSSVGS=±20V,VDS=0V--±100nA
Drain-Source On-State ResistanceRDS(ON)*VGS=10V,IDS=30A-5768mΩ
Diode Characteristics
Diode Forward VoltageVSD*ISD=30A,VGS=0V-0.851.3V
Reverse Recovery TimetrrISD=30A,dISD/dt=100A/µs-48-ns
Reverse Recovery ChargeQrr--78-nC
Dynamic Characteristics
Gate ResistanceRGVGS=0V,VDS=0V,F=1 MHz-2.6-Ω
Input CapacitanceCissVGS=0V, VDS=25V, Frequency=1.0MHz-2444-pF
Output CapacitanceCoss--129-pF
Reverse Transfer CapacitanceCrss--24-pF
Turn-on Delay Timetd(ON)VDD=100V,RG=2.5Ω, IDS=30A,VGS=10V-30-ns
Turn-on Rise TimeTr--20-ns
Turn-off Delay Timetd(OFF)--21-ns
Turn-off Fall TimeTf--31-ns
Gate Charge Characteristics
Total Gate ChargeQgVDS100V, VGS=10V ID=20A-53-nC
Gate-Source ChargeQgs--11--
Gate-Drain ChargeQgd--16.5--

2409302231_HUAYI-HY1420P_C5121337.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance factory
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
quality Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic factory
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
quality General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic factory
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
quality Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating factory
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.