Trench N Channel MOSFET Featuring Low Gate Charge HUASHUO HSU8048 Ideal for Synchronous Rectification
Key Attributes
Model Number:
HSU8048
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
48A
RDS(on):
6.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.3V
Reverse Transfer Capacitance (Crss@Vds):
38pF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
2.86nF@40V
Pd - Power Dissipation:
56W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
HSU8048
Package:
TO-252
Product Description
Product Overview
The HSU8048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous rectification applications. This product meets RoHS and Halogen-Free compliance, with 100% EAS guaranteed and full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Trench
- Compliance: RoHS, Halogen-Free
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
- Availability: Green Device Available
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSU8048 | Drain-Source Voltage (VDS) | 80 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | 48 | A | |||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V | 42.5 | A | |||
| Pulsed Drain Current (IDM) | 170 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 57.8 | mJ | ||||
| Avalanche Current (IAS) | 34 | A | ||||
| Total Power Dissipation (PD@TC=25) | 56 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | 62 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 2.2 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 80 | V | |||
| Static Drain-Source On-Resistance (RDS(ON),typ) | VGS=10V , ID=48A | 4.3 | m | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=20A | 4.3 | 6.5 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=20A | 6.3 | 8.5 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 2.3 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=64V , VGS=0V , TJ=25 | 1 | uA | |||
| Diode Characteristics | Continuous Source Current (IS) | VG=VD=0V , Force Current | 48 | A | ||
| Diode Forward Voltage (VSD) | VGS=0V , IS=A , TJ=25 | 0.77 | 1.0 | V |
2410121448_HUASHUO-HSU8048_C845608.pdf
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