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quality Fast Switching P Channel 100V MOSFET HUASHUO HSBA0195A Designed for Power Tools and DC DC Converters factory
quality Fast Switching P Channel 100V MOSFET HUASHUO HSBA0195A Designed for Power Tools and DC DC Converters factory

Fast Switching P Channel 100V MOSFET HUASHUO HSBA0195A Designed for Power Tools and DC DC Converters

Key Attributes
Model Number: HSBA0195A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
1 P-Channel
Output Capacitance(Coss):
1.423nF
Input Capacitance(Ciss):
3.25nF
Pd - Power Dissipation:
105W
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
HSBA0195A
Package:
PRPAK5x6-8L
Product Description

Product Overview

The HSBA0195A is a P-Channel 100V Fast Switching MOSFET designed for high-frequency switching and synchronous rectification applications. It is ideal for DC/DC converters, power tool applications, and features advanced high cell density Trench technology. This MOSFET is 100% EAS guaranteed and offers fast switching speed.

Product Attributes

  • Brand: HS-SMEI
  • Device Type: P-Channel MOSFET
  • Technology: Advanced high cell density Trench technology
  • Certifications: Green Device Available

Technical Specifications

HSBA0195A P-Ch 100V Fast Switching MOSFETs
Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -100 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V1 -60 A
ID@TC=100 Continuous Drain Current, VGS @ -10V1 -35 A
ID@TA=25 Continuous Drain Current, VGS @ -10V1 -7.8 A
ID@TA=100 Continuous Drain Current, VGS @ -10V1 -6.1 A
IDM Pulsed Drain Current2 -165 A
EAS Single Pulse Avalanche Energy3 355 mJ
IAS Avalanche Current -84 A
PD@TC=25 Total Power Dissipation4 105 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient1 --- 62 /W
RJC Thermal Resistance Junction-Case1 --- 1.2 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -100 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-20A 17 20 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -2.0 --- -4.0 V
IDSS Drain-Source Leakage Current VDS=-80V , VGS=0V , TJ=25 --- --- -1 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
Qg Total Gate Charge VDS=-50V , VGS=-10V , ID=-20A 52 --- nC
Qgs Gate-Source Charge 14 ---
Qgd Gate-Drain Charge 13 ---
Td(on) Turn-On Delay Time VDD=-50V , VGS=-10V , RG=3.3, ID=-20A 17 --- ns
Tr Rise Time 42 ---
Td(off) Turn-Off Delay Time 46 ---
Tf Fall Time 42 ---
Ciss Input Capacitance VDS=-25V , VGS=0V , f=1MHz 3250 --- pF
Coss Output Capacitance 1423 ---
Crss Reverse Transfer Capacitance 95 ---
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- -60 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 --- --- 1.2 V
trr Reverse Recovery Time IF=-20A , di/dt=-100A/s , TJ=25 --- 91 --- nS
Qrr Reverse Recovery Charge --- 355 --- nC
Applications
High Frequency Switching and Synchronous Rectification.
DC/DC Converters.
Power Tool Application.
Ordering Information
Part Number Package code Packaging
HSBA0195A PRPAK5*6 3000/Tape&Reel

2410121650_HUASHUO-HSBA0195A_C22359244.pdf

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