quality Fast Switching MOSFET P Channel 100V HUASHUO HSY0149A for DC DC Converter and Synchronous Rectification factory

Fast Switching MOSFET P Channel 100V HUASHUO HSY0149A for DC DC Converter and Synchronous Rectification

Name: Fast Switching MOSFET P Channel 100V HUASHUO HSY0149A for DC DC Converter and Synchronous Rectification
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: HSY0149A
Availability: InStock

Key Attributes

Model Number: HSY0149A

Product Custom Attributes

Mfr. Part #:

HSY0149A

Package:

TOLL-8

Product Description

Product Overview

The HSY0149A is a P-Channel 100V Fast Switching MOSFET designed for high-frequency switching and synchronous rectification applications. It is ideal for DC/DC converters and power tool applications, offering a 100% EAS guaranteed rating, fast switching speed, and advanced high cell density SGT MOS technology. This device is available as a Green Device.

Product Attributes

Brand: HS-Semi
Green Device Available: Yes

Technical Specifications

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Units
Absolute Maximum Ratings
VDS	Drain-Source Voltage				-100	V
VGS	Gate-Source Voltage				±20	V
ID@TC=25	Continuous Drain Current, VGS @ -10V¹				-150	A
ID@TC=100	Continuous Drain Current, VGS @ -10V¹				-97	A
IDM	Pulsed Drain Current²				-600	A
EAS	Single Pulse Avalanche Energy³				355	mJ
IAS	Avalanche Current				-75	A
PD@TC=25	Total Power Dissipation⁴				270	W
TSTG	Storage Temperature Range		-55		150
TJ	Operating Junction Temperature Range		-55		150
Thermal Data
RJA	Thermal Resistance Junction-Ambient¹			---	50	/W
RJC	Thermal Resistance Junction-Case¹			---	0.4	/W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=-250uA	-100	---	---	V
RDS(ON)	Static Drain-Source On-Resistance²	VGS=-10V , ID=-20A		8.5	10	m
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =-250uA	-2.0	-2.8	-4.0	V
IDSS	Drain-Source Leakage Current	VDS=-80V , VGS=0V , TJ=25		---	-1	uA
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V		---	±100	nA
Rg	Gate Resistance	VDS=-0V , VGS=0V, f=1MHz		2.1	---
Qg	Total Gate Charge	VDS=-50V , VGS=-10V , ID=-20A		78	---	nC
Qgs	Gate-Source Charge			21	---
Qgd	Gate-Drain Charge			19.5	---
Td(on)	Turn-On Delay Time	VDD=-50V , VGS=-10V , RG=3.3, ID=-20A		17	---	ns
Tr	Rise Time			42	---	ns
Td(off)	Turn-Off Delay Time			46	---	ns
Tf	Fall Time			42	---	ns
Ciss	Input Capacitance	VDS=-50V , VGS=0V , f=1MHz		6550	---	pF
Coss	Output Capacitance			2123	---	pF
Crss	Reverse Transfer Capacitance			145	---	pF
Diode Characteristics
IS	Continuous Source Current^1,5	VG=VD=0V , Force Current		---	-150	A
VSD	Diode Forward Voltage²	VGS=0V , IS=-1A , TJ=25		---	1.2	V

Note:
¹ The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
² The data tested by pulsed, pulse width ≤300us, duty cycle ≤2%.
³ The EAS data shows Max. rating. The test condition is VDD=-50V, VGS=-10V, L=0.5mH, IAS=-75A.
⁴ The power dissipation is limited by 150 junction temperature.
⁵ The data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.

Features

100% EAS Guaranteed
Green Device Available
Fast Switching Speed
Advanced high cell density SGT MOS Technology

Applications

High Frequency Switching and Synchronous Rectification
DC/DC Converters
Power Tool Application

Product Summary

Part Number: HSY0149A
Package: TOLL
Packaging: 2000/Tape&Reel

2512261650_HUASHUO-HSY0149A_C53244085.pdf

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