86--136 6733 2386
quality Fast Switching N Channel MOSFET HSBA6032 Featuring High Cell Density Trench Technology and Operation factory
quality Fast Switching N Channel MOSFET HSBA6032 Featuring High Cell Density Trench Technology and Operation factory

Fast Switching N Channel MOSFET HSBA6032 Featuring High Cell Density Trench Technology and Operation

Key Attributes
Model Number: HSBA6032
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.1mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
151pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
3.307nF@30V
Pd - Power Dissipation:
52W
Gate Charge(Qg):
57nC@10V
Mfr. Part #:
HSBA6032
Package:
PRPAK5x6-8L
Product Description

Product Overview

The HSBA6032 is a high cell density trenched N-channel Fast Switching MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics. This product meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Its advanced high cell density Trench technology contributes to its superior performance.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Channel MOSFET
  • Switching Speed: Fast Switching
  • Technology: Advanced high cell density Trench technology
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed, Full function reliability approved

Technical Specifications

Product Summary Symbol Parameter Conditions Min. Typ. Max. Unit
HSBA6032 BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 60 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=20A --- 7.1 8.5 m
VGS=4.5V , ID=15A --- 9.5 12 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 --- 2.5 V
IDSS Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=25 --- --- 1 uA
VDS=48V , VGS=0V , TJ=55 --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.2 ---
Qg Total Gate Charge (10V) VDS=30V , VGS=10V , ID=20A --- 57 --- nC
Qgs Gate-Source Charge --- 8.7 --- nC
Qgd Gate-Drain Charge --- 14 --- nC
Td(on) Turn-On Delay Time VDD=30V , VGS=10V , RG=3.3, ID=20A --- 16.2 --- ns
Tr Rise Time --- 41.2 --- ns
Td(off) Turn-Off Delay Time --- 56.4 --- ns
Tf Fall Time --- 16.2 --- ns
Ciss Input Capacitance VDS=30V , VGS=0V , f=1MHz --- 3307 --- pF
Coss Output Capacitance --- 201 --- pF
Crss Reverse Transfer Capacitance --- 151 --- pF
IS Continuous Source Current VG=VD=0V , Force Current --- --- 60 A
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 --- --- 1.2 V
trr Reverse Recovery Time IF=20A , dI/dt=100A/s , TJ=25 --- 22 --- nS
Qrr Reverse Recovery Charge --- 72 --- nC
Absolute Maximum Ratings Parameter Rating Units
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 60 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1 38 A
IDM Pulsed Drain Current2 280 A
EAS Single Pulse Avalanche Energy3 80 mJ
IAS Avalanche Current 40 A
PD@TC=25 Total Power Dissipation4 52 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
Thermal Data Parameter Conditions Typ. Max. Unit
RJA Thermal Resistance Junction-ambient1 --- 62 /W
RJC Thermal Resistance Junction-case1 --- 2.4 /W
Package Dimensions
PRPAK5X6 (See attached diagram)

2409291036_HUASHUO-HSBA6032_C508830.pdf
Related Products
quality High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant factory
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
quality High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant factory
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
quality Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current factory
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
quality Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor factory
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.