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quality Power Control with HUASHUO HSBA90N12 N Channel Fast Switching MOSFET and Advanced Trench MOS Design factory
quality Power Control with HUASHUO HSBA90N12 N Channel Fast Switching MOSFET and Advanced Trench MOS Design factory

Power Control with HUASHUO HSBA90N12 N Channel Fast Switching MOSFET and Advanced Trench MOS Design

Key Attributes
Model Number: HSBA90N12
Product Custom Attributes
Drain To Source Voltage:
120V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
6.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.2V
Reverse Transfer Capacitance (Crss@Vds):
17pF@60V
Number:
1 N-channel
Pd - Power Dissipation:
125W
Input Capacitance(Ciss):
3.82nF@60V
Gate Charge(Qg):
39nC@4.5V
Mfr. Part #:
HSBA90N12
Package:
PRPAK5x6-8L
Product Description

Product Overview

The HSBA90N12 is a high-performance N-Channel Fast Switching MOSFET designed for demanding applications. Featuring advanced trench MOS technology, it offers low gate charge and low on-resistance (Rds(on)), with a guaranteed 100% EAS rating. This device is suitable for load switching, LED applications, networking, and quick chargers, providing efficient and reliable power management. It is available as a Green Device.

Product Attributes

  • Brand: HS-Semi
  • Technology: Advanced Trench MOS
  • Device Type: N-Channel MOSFET
  • Switching Speed: Fast
  • Availability: Green Device Available

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Units
HSBA90N12 Drain-Source Voltage (VDS) 120 V
Gate-Source Voltage (VGS) 20 V
Continuous Drain Current (ID@TC=25) 90 A
Continuous Drain Current (ID@TC=100) 58 A
Pulsed Drain Current (IDM) 320 A
Single Pulse Avalanche Energy (EAS) 580 mJ
Avalanche Current (IAS) 48 A
Total Power Dissipation (PD@TC=25) 125 W
Storage Temperature Range (TSTG) -55 150
Operating Junction Temperature Range (TJ) -55 150
Thermal Resistance Junction-Ambient (RJA) --- 55 /W
Thermal Resistance Junction-Case (RJC) --- 1 /W
Drain-Source Breakdown Voltage (BVDSS) VGS=0V , ID=250uA 120 --- --- V
Static Drain-Source On-Resistance (RDS(ON)) VGS=10V , ID=20A --- 6.5 8 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=4.5V , ID=20A --- 7.9 10 m
Gate Threshold Voltage (VGS(th)) VGS=VDS , ID =250uA 1.2 1.7 2.2 V
Drain-Source Leakage Current (IDSS) VDS=96V , VGS=0V , TJ=25 --- --- 1 uA
Gate-Source Leakage Current (IGSS) VGS=20V , VDS=0V --- --- 100 nA
Model Parameter Conditions Typ. Max. Units
HSBA90N12 Gate Resistance (Rg) VDS=0V , VGS=20V,f=1MHz 1.5 ---
Total Gate Charge (Qg) (10V) VDS=60V , VGS=4.5V , ID=20A --- --- nC
Total Gate Charge (Qg) (4.5V) 39 --- nC
Gate-Source Charge (Qgs) 10.3 --- nC
Gate-Drain Charge (Qgd) 19.5 --- nC
Model Parameter Conditions Typ. Max. Units
HSBA90N12 Turn-On Delay Time (Td(on)) VDD=30V , VGS=10V , RG=6, ID=1A 26 --- ns
Rise Time (Tr) 15 --- ns
Turn-Off Delay Time (Td(off)) 65 --- ns
Fall Time (Tf) 85 --- ns
Model Parameter Conditions Typ. Max. Units
HSBA90N12 Input Capacitance (Ciss) VDS=60V , VGS=0V , f=1MHz 3820 --- pF
Output Capacitance (Coss) 525 --- pF
Reverse Transfer Capacitance (Crss) 17 --- pF
Model Parameter Conditions Typ. Max. Units
HSBA90N12 Continuous Source Current (IS) VG=VD=0V , Force Current --- 90 A
Diode Forward Voltage (VSD) VGS=0V , IS=1A , TJ=25 --- 1.2 V

2410121656_HUASHUO-HSBA90N12_C7543699.pdf

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