switching P channel mosfet HUASHUO HSCE1218 with low gate charge and high cell density trench design
Key Attributes
Model Number:
HSCE1218
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
60A
RDS(on):
5.6mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.13nF
Number:
1 P-Channel
Output Capacitance(Coss):
1.42nF
Input Capacitance(Ciss):
6.91nF
Pd - Power Dissipation:
83W
Gate Charge(Qg):
41nC@4.5V
Mfr. Part #:
HSCE1218
Package:
DFN-8(3.3x3.3)
Product Description
Product Overview
The HSCE1218 is a P-channel, 12V, fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone full functional reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS
- Technology: P-channel, Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Package Type: DFN3.3*3.3
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -12 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -4.5V1 | -60 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ -4.5V1 | -32 | A | |||
| IDM | Pulsed Drain Current2 | -240 | A | |||
| PD@TC=25 | Total Power Dissipation3 | 83 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | 55 | /W | |||
| RJA | Thermal Resistance Junction-Ambient1 (t ≤10s) | 20 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 1.5 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -12 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25, ID=-1mA | -0.012 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-20A | 3.2 | 4 | mΩ | |
| VGS=-2.5V , ID=-20A | 4.3 | 5.6 | mΩ | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.5 | -0.65 | -1.0 | V |
| ΔVGS(th) | VGS(th) Temperature Coefficient | 2.94 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-12V , VGS=0V , TJ=25 | -1 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | ±100 | nA | ||
| Rg | Gate Resistance | VDS=-0V , VGS=0V, f=1MHz | 7.3 | Ω | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-6V , VGS=-4.5V , ID=-20A | 41 | nC | ||
| Qgs | Gate-Source Charge | 10 | nC | |||
| Qgd | Gate-Drain Charge | 14 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=-6V , VGS=-4.5V , RG=3.3Ω, ID=-20A | 12 | ns | ||
| Tr | Rise Time | 7 | ns | |||
| Td(off) | Turn-Off Delay Time | 216 | ns | |||
| Tf | Fall Time | 96 | ns | |||
| Ciss | Input Capacitance | VDS=-6V , VGS=0V , f=1MHz | 6910 | pF | ||
| Coss | Output Capacitance | 1420 | pF | |||
| Crss | Reverse Transfer Capacitance | 1130 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -60 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-20A , dI/dt=100A/µs , TJ =25 | 25 | nS | ||
| Qrr | Reverse Recovery Charge | 11 | nC | |||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤300µs, duty cycle ≤2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2411061707_HUASHUO-HSCE1218_C42376799.pdf
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