Lead Free N Channel Enhancement Mode MOSFET HUAYI HY4306P with High Current and Low RDS ON Resistance
Key Attributes
Model Number:
HY4306P
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
230A
RDS(on):
3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
558pF
Number:
1 N-channel
Input Capacitance(Ciss):
7.219nF
Output Capacitance(Coss):
1.093nF
Pd - Power Dissipation:
258W
Gate Charge(Qg):
171nC@10V
Mfr. Part #:
HY4306P
Package:
TO-220FB-3L
Product Description
Product Overview
The HY4306 is a N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a low RDS(ON) and is available in reliable and rugged lead-free and green devices. This MOSFET is 100% avalanche tested.
Product Attributes
- Brand: HUAYI
- Origin: China
- Material: Lead Free and Green Devices (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Model | Type | Drain-Source Voltage (V) | Continuous Drain Current (A) TC=25C | RDS(ON) (m) Typ. @ VGS=10V | Package | Features |
| HY4306P/B | N-Channel Enhancement Mode MOSFET | 60 | 230 (Mounted on Large Heat Sink) | 2.6 | TO-220FB-3L (P) / TO-263-2L (B) | Reliable and Rugged, 100% avalanche tested, Lead Free and Green Devices Available |
2411220225_HUAYI-HY4306P_C358108.pdf
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