HSBA4206 Dual N Channel 40V MOSFET Featuring Low Gate Charge and High Cell Density Trench Technology
Key Attributes
Model Number:
HSBA4206
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
138pF@15V
Number:
2 N-Channel
Pd - Power Dissipation:
21W
Input Capacitance(Ciss):
2.332nF@15V
Gate Charge(Qg):
18.8nC@4.5V
Mfr. Part #:
HSBA4206
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA4206 is a dual N-channel, 40V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDSON and gate charge, making it suitable for most synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: HS
- Product Type: Dual N-Channel MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Parameter | Value | Conditions |
|---|---|---|
| Model | HSBA4206 | |
| Channel Type | N-Channel | |
| Drain-Source Voltage (VDS) | 40 V | |
| Continuous Drain Current (ID) | 35 A | |
| Storage Temperature Range | -55 to 150 C | |
| Typical RDSON | 7.9 m | |
| Total Gate Charge (QG) | ~35 nC | VDS=20V, ID=12A |
2410121521_HUASHUO-HSBA4206_C22359246.pdf
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