Low RDS on N Channel MOSFET HUASHUO HSBB4072 Ideal for in SMPS DC DC Converters and Or ing Circuits
Key Attributes
Model Number:
HSBB4072
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.2mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
88pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
2.69nF@20V
Pd - Power Dissipation:
42W
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
HSBB4072
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB4072 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring advanced trench MOS technology, it offers low RDS(on) and is 100% EAS guaranteed. This MOSFET is ideal for use in Synchronous Rectification for SMPS, DC/DC Converters, and Or-ing circuits. It is available as a Green Device.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced Trench MOS
- Device Type: N-Channel MOSFET
- Switching Speed: Fast
- Environmental: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current1,6 | 100 | A | |||
| ID@TC=100 | Continuous Drain Current1,6 | 64 | A | |||
| ID@TA=25 | Continuous Drain Current1,6 | 21 | A | |||
| ID@TA=100 | Continuous Drain Current1,6 | 13.4 | A | |||
| IDM | Pulsed Drain Current2 | 200 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 162 | mJ | |||
| IAS | Avalanche Current | 57 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 42 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient (Steady State)1 | --- | --- | 70 | /W | |
| RJC | Thermal Resistance Junction-Case1 | --- | --- | 3 | /W | |
| Product Summary | ||||||
| VDS | 40 | V | ||||
| RDS(ON),TYP | ID 100 A | 2.2 | m | |||
| Applications | ||||||
| SMPS Synchronous Rectification, DC/DC Converters, Or-ing | ||||||
| Features | ||||||
| Advanced Trench MOS Technology, Low RDSon, 100% EAS Guaranteed, Green Device Available | ||||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | --- | 2.2 | 2.7 | m |
| VGS=4.5V , ID=20A | --- | 3.3 | 4.0 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.8 | 2.2 | V |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=32V , VGS=0V , TJ=55 | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | --- | |
| Qg | Total Gate Charge | VDS=20V , VGS=10V , ID=20A | --- | 46 | --- | nC |
| Qgs | Gate-Source Charge | --- | 8 | --- | ||
| Qgd | Gate-Drain Charge | --- | 10.5 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=20V , VGS=10V , RG=1 ID=1A | --- | 15.3 | --- | ns |
| Tr | Rise Time | --- | 9.6 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 36 | --- | ||
| Tf | Fall Time | --- | 35 | --- | ||
| Ciss | Input Capacitance | VDS=20V , VGS=0V , f=1MHz | --- | 2690 | --- | pF |
| Coss | Output Capacitance | --- | 893 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 88 | --- | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 85 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSBB4072 | PRPAK3*3 | 3000/Tape&Reel | ||||
2410121503_HUASHUO-HSBB4072_C5341685.pdf
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