High Current N Channel Enhancement Mode MOSFET with 100 Volt 160 Amp HUAYI HYG045N10NS1P and Low On Resistance
Key Attributes
Model Number:
HYG045N10NS1P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
160A
RDS(on):
4.5mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
107pF
Number:
1 N-channel
Output Capacitance(Coss):
1.087nF
Pd - Power Dissipation:
250W
Input Capacitance(Ciss):
7.877nF
Gate Charge(Qg):
117nC@10V
Mfr. Part #:
HYG045N10NS1P
Package:
TO-220FB
Product Description
HYG045N10NS1/B N-Channel Enhancement Mode MOSFET
The HYG045N10NS1/B is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a robust and reliable solution with key features such as 100V/160A rating, low on-state resistance (RDS(ON)=3.8m typ. @ VGS = 10V), and 100% avalanche tested. This device is available in lead-free and green (RoHS compliant) versions, making it suitable for environmentally conscious designs. It is ideal for use in Uninterruptible Power Supplies and Motor Control systems.
Product Attributes
- Brand: Hymexa
- Origin: China
- Certifications: RoHS Compliant (Lead-Free and Green)
Technical Specifications
| Model | Feature | VDSS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | Package |
| HYG045N10NS1P/B | N-Channel Enhancement Mode MOSFET | 100 | 160 | 3.8 (typ.) | TO-220FB-3L |
| HYG045N10NS1P/B | N-Channel Enhancement Mode MOSFET | 100 | 160 | 3.8 (typ.) | TO-263-2L |
| Symbol | Parameter | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | 100 | |||
| VGS | Gate-Source Voltage | V | 20 | |||
| TJ | Maximum Junction Temperature | C | -55 | 175 | ||
| TSTG | Storage Temperature Range | C | -55 | 175 | ||
| IS | Source Current-Continuous(Body Diode) | TC=25C, Mounted on Large Heat Sink | A | 160 | ||
| IDM | Pulsed Drain Current | TC=25C | A | 690 | ||
| ID | Continuous Drain Current | TC=25C | A | 160 | ||
| ID | Continuous Drain Current | TC=100C | A | 113 | ||
| PD | Maximum Power Dissipation | TC=25C | W | 250 | ||
| PD | Maximum Power Dissipation | TC=100C | W | 125 | ||
| RJC | Thermal Resistance, Junction-to-Case | C/W | 0.6 | |||
| RJA | Thermal Resistance, Junction-to-Ambient | Surface mounted on FR-4 board | C/W | 62 | ||
| EAS | Single Pulsed-Avalanche Energy | L=0.3mH, Limited by TJmax | mJ | 707 | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250A | V | 100 | - | - |
| IDSS | Drain-to-Source Leakage Current | VDS=100V, VGS=0V | A | - | 1.0 | |
| IDSS | Drain-to-Source Leakage Current | TJ=125C | A | - | 50 | |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | V | 2 | 3 | 4 |
| IGSS | Gate-Source Leakage Current | VGS=20V, VDS=0V | nA | - | 100 | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, IDS=50A | m | 3.8 | 4.5 | |
| VSD | Diode Forward Voltage | ISD=50A, VGS=0V | V | 0.86 | 1.3 | |
| trr | Reverse Recovery Time | ISD=50A, dISD/dt=100A/s | ns | 67 | - | |
| Qrr | Reverse Recovery Charge | nC | 120 | - | ||
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V, VDS=0V, F=1MHz | 2.7 | - | ||
| Ciss | Input Capacitance | VGS=0V, VDS=50V, Frequency=1.0MHz | pF | 7877 | - | |
| Coss | Output Capacitance | pF | 1087 | - | ||
| Crss | Reverse Transfer Capacitance | pF | 107 | - | ||
| td(ON) | Turn-on Delay Time | VDD=50V, RG=4, IDS=50A, VGS=10V | ns | 22 | - | |
| tr | Turn-on Rise Time | ns | 84 | - | ||
| td(OFF) | Turn-off Delay Time | ns | 94 | - | ||
| tf | Turn-off Fall Time | ns | 107 | - | ||
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS=50V, VGS=10V, ID=50A | nC | 117 | - | |
| Qgs | Gate-Source Charge | nC | 35 | - | ||
| Qgd | Gate-Drain Charge | nC | 22 | - | ||
2409302230_HUAYI-HYG045N10NS1P_C2986719.pdf
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