N Channel MOSFET Trench Technology Device HUASHUO HSH8004 Ideal for Fast Switching Applications
Key Attributes
Model Number:
HSH8004
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
175A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
50pF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
4.45nF@40V
Pd - Power Dissipation:
192W
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
HSH8004
Package:
TO-263
Product Description
Product Overview
The HSH8004 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline, achieved through advanced high cell density trench technology.Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|---|---|
| HSH8004 | Drain-Source Voltage (VDS) | 80 | V | ||||
| Gate-Source Voltage (VGS) | ±20 | V | |||||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V1,6 | 175 | A | ||||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V1,6 | 123 | A | ||||
| Pulsed Drain Current (IDM)2 | 440 | A | |||||
| Single Pulse Avalanche Energy (EAS)3 | 378 | mJ | |||||
| Total Power Dissipation (PD@TC=25)4 | 192 | W | |||||
| Storage Temperature Range (TSTG) | -55 | 175 | |||||
| Operating Junction Temperature Range (TJ) | -55 | 175 | |||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 62 | /W | ||||
| Thermal Resistance Junction-Case (RJC)1 | --- | 0.65 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 80 | --- | --- | V | ||
| HSH8004 | Static Drain-Source On-Resistance (RDS(ON),TYP)2 | VGS=10V , ID=20A | 3.1 | 3.5 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.8 | 2.5 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=80V , VGS=0V , TJ=25 | --- | 1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=64V , VGS=0V , TJ=25 | --- | 100 | nA | |||
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | --- | ±100 | nA | |||
| Forward Transconductance (gfs) | VDS=5V , ID=30A | --- | 50 | --- | S | ||
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | --- | 1.2 | --- | |||
| Total Gate Charge (Qg) (10V) | VDD=40V , VGS=10V , ID=20A | --- | 80 | --- | nC | ||
| Gate-Source Charge (Qgs) | --- | 15 | --- | nC | |||
| Gate-Drain Charge (Qgd) | --- | 16 | --- | nC | |||
| Turn-On Delay Time (td(on)) | VDD=40V , VGS=10V , RG=6, ID=20A | --- | 17 | --- | ns | ||
| HSH8004 | Rise Time (tr) | --- | 32 | --- | ns | ||
| Turn-Off Delay Time (td(off)) | --- | 50 | --- | ns | |||
| Fall Time (tf) | --- | 18 | --- | ns | |||
| Input Capacitance (Ciss) | VDS=40V , VGS=0V , f=1MHz | --- | 4450 | --- | pF | ||
| Output Capacitance (Coss) | --- | 800 | --- | pF | |||
| HSH8004 | Reverse Transfer Capacitance (Cr) | --- | 50 | --- | pF | ||
| Continuous Source Current (IS)1,5 | VG=VD=0V , Force Current | --- | --- | 175 | A | ||
| Diode Forward Voltage (VSD)2 | VGS=0V , IS=A , TJ=25 | --- | --- | 1.5 | V | ||
| HSH8004 | Reverse Recovery Time (trr) | IF=20A , dI/dt=100A/s , TJ=25 | --- | 40 | ns | ||
| Reverse Recovery Charge (Qrr) | --- | --- | 45 | nC |
2410121341_HUASHUO-HSH8004_C508813.pdf
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