Lithium Ion Battery Pack Dual N Channel Fast Switching MOSFET HUASHUO HSCC8233 with Low On Resistance
Product Overview
The HSCC8233 is a dual N-channel fast switching MOSFET featuring low drain-source ON resistance and robust ESD protection. Designed for Lithium-ion battery pack applications, this trenched MOSFET meets RoHS and Green Product requirements, offering full function reliability. It is available as a green device.
Product Attributes
- Brand: HS-Semi
- Device Type: Dual N-Channel Fast Switching MOSFET
- Certifications: RoHS Compliant, Green Product
- Protection: ESD Protected
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSCC8233 | Drain-Source Voltage (VDS) | - | - | - | 20 | V |
| Gate-Source Voltage (VGS) | - | - | - | 12 | V | |
| Continuous Drain Current (ID) @ TA=25, VGS @ 4.5V | - | - | - | 11 | A | |
| Continuous Drain Current (ID) @ TA=70, VGS @ 4.5V | - | - | - | 8.8 | A | |
| Pulsed Drain Current (IDM) | - | - | - | 70 | A | |
| Total Power Dissipation (PD) @ TA=25 | - | - | - | 1.56 | W | |
| Storage Temperature Range (TSTG) | - | -55 | - | 150 | ||
| Operating Junction Temperature Range (TJ) | - | -55 | - | 150 | ||
| Thermal Resistance Junction-Ambient (RJA) | (t 10s) | - | - | 80 | /W | |
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 20 | - | - | V | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=5.5A | - | - | 7.2 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 0.5 | - | 1.5 | V | |
| Diode Characteristics | Continuous Source Current (IS) | VG=VD=0V , Force Current | - | - | 11 | A |
| Pulsed Source Current (ISM) | - | - | - | 70 | A | |
| Diode Forward Voltage (VSD) | VGS=0V , IS=11A , TJ=25 | - | - | 1.2 | V |
Pin Configuration: DFN2x3
Package Dimensions: DFN2x3
2410121532_HUASHUO-HSCC8233_C700968.pdf
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