complementary MOSFET HUASHUO HSBA1641 with trench technology and full function reliability approval
Key Attributes
Model Number:
HSBA1641
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
30A
RDS(on):
11mΩ@10V,5A;21mΩ@10V,6A
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA;1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
76pF@15V;102pF@15V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
1.013nF@15V;1.415nF@15V
Pd - Power Dissipation:
32W
Gate Charge(Qg):
10nC@4.5V;11.5nC@4.5V
Mfr. Part #:
HSBA1641
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA1641 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density for excellent RDS(ON) and gate charge characteristics. These MOSFETs are designed for synchronous buck converter applications and meet RoHS and Green Product requirements. They are 100% EAS guaranteed with full function reliability approved, offering super low gate charge and excellent CdV/dt effect decline due to advanced high cell density Trench technology.Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench technology
- Reliability: 100% EAS Guaranteed, Full function reliability approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSBA1641 (N-Ch) | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 40 | V | ||
| BVDSS Temperature Coefficient | Reference to 25, ID=1mA | 0.034 | V/ | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V, ID=5A | 11 | 15 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V, ID=4A | 14 | 20 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.5 | V | |
| VGS(th) Temperature Coefficient | -4.56 | mV/ | ||||
| Drain-Source Leakage Current (IDSS) | VDS=32V, VGS=0V, TJ=25 | 1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=32V, VGS=0V, TJ=55 | 5 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | 100 | nA | |||
| Forward Transconductance (gfs) | VDS=5V, ID=5A | 14 | S | |||
| Gate Resistance (Rg) | VDS=0V, VGS=0V, f=1MHz | 2.6 | ||||
| Total Gate Charge (Qg) (4.5V) | VDS=32V, VGS=4.5V, ID=5A | 10 | nC | |||
| Turn-On Delay Time (Td(on)) | VDD=20V, VGS=10V, RG=3.3, ID=1A | 2.8 | ns | |||
| Rise Time (Tr) | 12.8 | ns | ||||
| Fall Time (Tf) | 6.4 | ns | ||||
| HSBA1641 (P-Ch) | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=-250uA | -40 | V | ||
| BVDSS Temperature Coefficient | Reference to 25, ID=-1mA | -0.02 | V/ | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V, ID=-6A | 21 | 26 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V, ID=-3A | 27 | 33 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID=-250uA | -1.0 | -1.7 | -2.5 | V | |
| VGS(th) Temperature Coefficient | 3.72 | mV/ | ||||
| Drain-Source Leakage Current (IDSS) | VDS=-32V, VGS=0V, TJ=25 | 1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=-32V, VGS=0V, TJ=55 | 5 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | 100 | nA | |||
| Forward Transconductance (gfs) | VDS=-5V, ID=-6A | 13 | S | |||
| Gate Resistance (Rg) | VDS=0V, VGS=0V, f=1MHz | 9.1 | ||||
| Total Gate Charge (Qg) (-4.5V) | VDS=-20V, VGS=-4.5V, ID=-6A | 11.5 | nC | |||
| Turn-On Delay Time (Td(on)) | VDD=-15V, VGS=-10V, RG=3.3, ID=-1A | 22 | ns | |||
| Rise Time (Tr) | 15.7 | ns | ||||
| Fall Time (Tf) | 5.5 | ns | ||||
| Absolute Maximum Ratings | Continuous Drain Current (ID@TC=25) | VGS @ 10V | 30 (N-Ch) | -30 (P-Ch) | A | |
| Pulsed Drain Current (IDM) | 59 (N-Ch) | -59 (P-Ch) | A | |||
| Thermal Data | Total Power Dissipation (PD@TC=25) | 35 (N-Ch) | 35 (P-Ch) | W | ||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Electrical Characteristics | Continuous Drain Current (ID) | VGS @ 10V | 30 (N-Ch) | 21 (N-Ch) | -30 (P-Ch) | A |
| Pulsed Drain Current (IDM) | 59 (N-Ch) | -59 (P-Ch) | A |
2504101957_HUASHUO-HSBA1641_C45385128.pdf
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