P Channel Fast Switching MOSFET HUASHUO HSH0139 with Low Gate Charge and Excellent RDS ON Performance
Key Attributes
Model Number:
HSH0139
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+150℃
RDS(on):
55mΩ@4.5V,8A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
125pF@25V
Number:
1 P-Channel
Pd - Power Dissipation:
104W
Input Capacitance(Ciss):
6.516nF@25V
Gate Charge(Qg):
92nC@10V
Mfr. Part #:
HSH0139
Package:
TO-263
Product Description
Product Overview
The HSH0139 is a P-Channel Fast Switching MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for a wide variety of applications and meets RoHS and Green Product requirements. It is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HSH
- Technology: Advanced trench MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full function reliability approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSH0139 | Drain-Source Voltage (VDS) | -100 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TC=25) | VGS @ -10V | -35 | A | |||
| Continuous Drain Current (ID@TC=100) | VGS @ -10V | -23 | A | |||
| Pulsed Drain Current (IDM) | -100 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 345 | mJ | ||||
| Avalanche Current (IAS) | 28 | A | ||||
| Total Power Dissipation (PD@TC=25) | 104 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | 62 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 1.2 | /W | ||||
| HSH0139 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -100 | V | ||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=-10V , ID=-10A | 42 | 50 | m | ||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=-4.5V , ID=-8A | 46 | 55 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.2 | -1.8 | -2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=-100V , VGS=0V , TJ=25 | -50 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | 100 | nA | |||
| Forward Transconductance (gfs) | VDS=-10V , ID=-10A | 32 | S | |||
| Total Gate Charge (Qg) | VDS=-80V , VGS=-10V , ID=-14A | 92 | nC | |||
| Gate-Source Charge (Qgs) | 17.5 | |||||
| Gate-Drain Charge (Qgd) | 14 | |||||
| Turn-On Delay Time (Td(on)) | VDD=-50V , VGS=-10V , RG=3.3, ID=-14A | 20.5 | ns | |||
| Rise Time (Tr) | 32.2 | ns | ||||
| Turn-Off Delay Time (Td(off)) | 123 | ns | ||||
| Fall Time (Tf) | 63.7 | ns | ||||
| Input Capacitance (Ciss) | VDS=-25V , VGS=0V , f=1MHz | 6516 | pF | |||
| Output Capacitance (Coss) | 223 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 125 | pF | ||||
| HSH0139 | Continuous Source Current (IS) | VG=VD=0V , Force Current | -35 | A | ||
| Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | 1.2 | V | |||
| Reverse Recovery Time (trr) | IF=-14A , di/dt=-100A/s , TJ=25 | 31.2 | nS | |||
| Reverse Recovery Charge (Qrr) | 31.97 | nC |
2410121642_HUASHUO-HSH0139_C5341710.pdf
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