Trench technology p channel mosfet HUASHUO SI2305 with low gate charge and excellent rdson performance
Key Attributes
Model Number:
SI2305
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
-
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
151pF
Number:
1 P-Channel
Output Capacitance(Coss):
160pF
Input Capacitance(Ciss):
1.2nF
Pd - Power Dissipation:
1.31W
Gate Charge(Qg):
14.3nC@4.5V
Mfr. Part #:
SI2305
Package:
SOT-23
Product Description
Product Overview
The SI2305 is a P-channel, 20V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key features include super low gate charge, a green device option, and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
Technical Specifications
| Part Number | Package | Packaging | Description | Rating | Unit |
|---|---|---|---|---|---|
| SI2305 | SOT-23 | 3000/Tape&Reel | Drain-Source Voltage (VDS) | -20 | V |
| Gate-Source Voltage (VGS) | ±12 | V | |||
| Continuous Drain Current, VGS @ -4.5V (ID@TA=25) | -4.9 | A | |||
| Continuous Drain Current, VGS @ -4.5V (ID@TA=70) | -3.9 | A | |||
| Pulsed Drain Current (IDM) | -14 | A | |||
| Total Power Dissipation (PD@TA=25) | 1.31 | W | |||
| Total Power Dissipation (PD@TA=70) | 0.84 | W | |||
| Storage Temperature Range (TSTG) | -55 to 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 to 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) (t ≤10s) | 95 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | -20 | V | |||
| Static Drain-Source On-Resistance (RDS(ON),max) VGS=-4.5V , ID=-4.9A | 45 | m | |||
| SI2305 | SOT-23 | 3000/Tape&Reel | Gate Threshold Voltage (VGS(th)) VGS=VDS , ID =-250uA | -0.4 to -1.0 | V |
| Drain-Source Leakage Current (IDSS) VDS=-16V , VGS=0V , TJ=25 | -1 | uA | |||
| Gate-Source Leakage Current (IGSS) VGS=±12V , VDS=0V | ±100 | nA | |||
| Forward Transconductance (gfs) VDS=-5V , ID=-3A | 12.8 | S | |||
| Total Gate Charge (Qg) (-4.5V) VDS=-15V , VGS=-4.5V , ID=-3A | 10.2 to 14.3 | nC | |||
| Gate-Source Charge (Qgs) | 1.89 to 2.6 | nC | |||
| Gate-Drain Charge (Qgd) | 3.1 to 4.3 | nC | |||
| Turn-On Delay Time (td(on)) VDD=-10V , VGS=-4.5V , RG=3.3, ID=-3A | 5.6 to 11.2 | ns | |||
| Rise Time (tr) | 40.8 to 73 | ns | |||
| Turn-Off Delay Time (td(off)) | 33.6 to 67 | ns | |||
| Fall Time (tf) | 18 to 36 | ns | |||
| Input Capacitance (Ciss) VDS=-15V , VGS=0V , f=1MHz | 857 to 1200 | pF | |||
| Output Capacitance (Coss) | 114 to 160 | pF | |||
| Reverse Transfer Capacitance (Crss) | 108 to 151 | pF | |||
| Continuous Source Current (IS) VG=VD=0V , Force Current | -4.9 | A | |||
| SI2305 | SOT-23 | 3000/Tape&Reel | Pulsed Source Current (ISM) | -14 | A |
| Diode Forward Voltage (VSD) IS=-1A , TJ=25 | -1 | V | |||
| Reverse Recovery Time (trr) IF=-3A , di/dt=100A/s , TJ=25 | 21.8 | nS |
2410122016_HUASHUO-SI2305_C22359219.pdf
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