Fast switching MOSFET HUASHUO HSSX2303 dual P channel 20V with trench technology and low gate charge
Key Attributes
Model Number:
HSSX2303
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
800mA
RDS(on):
800mΩ@4.5V,0.8A
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
10pF@6V
Number:
2 P-Channel
Input Capacitance(Ciss):
145pF@6V
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
18nC@4.5V
Mfr. Part #:
HSSX2303
Package:
SOT-563
Product Description
Product Overview
The HSSX2303 is a dual P-channel, 20V fast switching MOSFET designed for high-density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements with full function reliability approval. Key features include super low gate charge, low threshold voltage, and suitability for high-side switching. The MOSFET is ESD protected up to 2KV.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench technology
- Protection: ESD Protected up to 2KV
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | 8 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V1 | -0.8 | A | |||
| IDM | Pulsed Drain Current2 | -3 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 0.15 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 800 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | --- | -0.014 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-0.8A | --- | 600 | 800 | m |
| VGS=-2.5V , ID=-0.6A | --- | 800 | 1000 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.5 | -0.67 | -1.0 | V |
| --- | 3.95 | --- | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | --- | --- | -1 | uA |
| VDS=-16V , VGS=0V , TJ=55 | --- | --- | -5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=8V , VDS=0V | --- | --- | 10 | uA |
| Qg | Total Gate Charge (-4.5V) | VDS=-6V , VGS=-4.5V , ID=-0.8A | --- | 18 | --- | nC |
| Qgs | Gate-Source Charge | --- | 4.2 | |||
| Qgd | Gate-Drain Charge | --- | 2.6 | |||
| Timing | Td(on) Turn-On Delay Time | VDD=-6V , VGS=-4.5V , RG=6, ID=-0.8A | --- | 6 | --- | ns |
| Tr Rise Time | --- | 12 | --- | |||
| Td(off) Turn-Off Delay Time | --- | 25 | --- | |||
| Tf Fall Time | --- | 6.8 | --- | |||
| Capacitance | Ciss Input Capacitance | VDS=-6V , VGS=0V , f=1MHz | --- | 145 | --- | pF |
| Coss Output Capacitance | --- | 115 | --- | |||
| Crss Reverse Transfer Capacitance | --- | 10 | --- | |||
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSSX2303 | SOT-563 | 3000/Tape&Reel | ||||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300us, duty cycle 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121435_HUASHUO-HSSX2303_C7543682.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
