60V P channel MOSFET HUASHUO HSM6113 fast switching device with trench technology and low gate charge
Key Attributes
Model Number:
HSM6113
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4.1A
RDS(on):
90mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.08nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
11.8nC@4.5V
Mfr. Part #:
HSM6113
Package:
SOP-8
Product Description
Product Overview
The HSM6113 is a P-channel, 60V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key benefits include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch MOSFET
- Voltage Rating: 60V
- Switching Speed: Fast Switching
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V | -4.1 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V | -3.2 | A | |||
| IDM | Pulsed Drain Current | -8.2 | A | |||
| EAS | Single Pulse Avalanche Energy | 29.7 | mJ | |||
| IAS | Avalanche Current | 24.4 | A | |||
| PD@TA=25 | Total Power Dissipation | 3.1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | 85 | /W | |||
| RJC | Thermal Resistance Junction-Case | 36 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | V | ||
| RDS(ON),max | Static Drain-Source On-Resistance | VGS=-10V , ID=-3A | 90 | m | ||
| RDS(ON),max | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-2A | 115 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | -2.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | 1 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| Qg | Total Gate Charge | VDS=-48V , VGS=-4.5V , ID=-3A | 11.8 | nC | ||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 1080 | pF | ||
| Coss | Output Capacitance | 73 | pF | |||
| Crss | Reverse Transfer Capacitance | 50 | pF | |||
| IS | Continuous Source Current | VG=VD=0V , Force Current | -4.1 | A | ||
| ISM | Pulsed Source Current | -8.2 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSM6113 | SOP-8 | 2500/Tape&Reel |
2410121456_HUASHUO-HSM6113_C700985.pdf
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