HSCB20D03 Dual P Channel MOSFET with Advanced Trench Technology and Excellent C dv dt Effect Decline
Key Attributes
Model Number:
HSCB20D03
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
100mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
37pF
Number:
2 P-Channel
Output Capacitance(Coss):
64pF
Input Capacitance(Ciss):
331pF@10V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
3.3nC@10V
Mfr. Part #:
HSCB20D03
Package:
DFN-6-EP(2x2)
Product Description
Product Overview
The HSCB20D03 is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. This device meets RoHS and Green Product requirements and offers super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology. It is available as a Green Device.
Product Attributes
- Brand: HS Semi
- Product Type: Dual P-CH Fast Switching MOSFETs
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSCB20D03 | Drain-Source Voltage (VDS) | -20 | V | |||
| Gate-Source Voltage (VGS) | 12 | V | ||||
| Continuous Drain Current (ID @ TA=25, VGS @ -4.5V) | -3 | A | ||||
| Continuous Drain Current (ID @ TA=70, VGS @ -4.5V) | -2 | A | ||||
| Pulsed Drain Current (IDM) | -12 | A | ||||
| Total Power Dissipation (PD @ TA=25) | 1.5 | W | ||||
| Total Power Dissipation (PD @ TA=70) | 0.95 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | 100 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -20 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-3.0A | 90 | 100 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-2.5V , ID=-2.0A | 110 | 130 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -0.5 | -0.75 | -1.2 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=-16V , VGS=0V , TJ=25 | -1 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=12V , VDS=0V | 100 | nA | |||
| Total Gate Charge (Qg) | VDS=-10V , VGS=-4.5V , ID=-3A | 3.3 | nC | |||
| Gate-Source Charge (Qgs) | 0.66 | |||||
| Gate-Drain Charge (Qgd) | 0.91 | |||||
| Input Capacitance (Ciss) | VDS=-10V , VGS=0V , f=1MHz | 331 | pF | |||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | -3 | A | |||
| Pulsed Source Current (ISM) | -12 | A |
2409291004_HUASHUO-HSCB20D03_C2828494.pdf
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