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quality P channel MOSFET HUASHUO HSSC3139 featuring low gate charge and RoHS compliance for power management factory
quality P channel MOSFET HUASHUO HSSC3139 featuring low gate charge and RoHS compliance for power management factory

P channel MOSFET HUASHUO HSSC3139 featuring low gate charge and RoHS compliance for power management

Key Attributes
Model Number: HSSC3139
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
650mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
500mΩ@4.5V,1A
Gate Threshold Voltage (Vgs(th)):
350mV
Reverse Transfer Capacitance (Crss@Vds):
11pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
150pF@15V
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
1.2nC@4.5V
Mfr. Part #:
HSSC3139
Package:
SOT-723
Product Description

Product Overview

HSSC3139 is a P-channel MOSFET featuring high cell density trenched technology, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. It supports high-side switching and meets RoHS and Green Product requirements with full function reliability approval. Key advantages include super low gate charge, low threshold voltage, and fast switching capabilities.

Product Attributes

  • Brand: HS-Semi
  • Product Type: P-Channel MOSFET
  • Technology: Trench
  • Certifications: RoHS, Green Product
  • Package: SOT-723

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Units
HSSC3139 Drain-Source Voltage (VDS) -20 V
Gate-Source Voltage (VGS) 12 V
Continuous Drain Current (ID) @ TA=25 VGS @ -4.5V1 -0.65 A
Pulsed Drain Current (IDM)2 -1.2 A
Total Power Dissipation (PD) @ TA=253 0.15 W
Storage Temperature Range (TSTG) -55 150
Operating Junction Temperature Range (TJ) -55 150
Thermal Resistance Junction-Ambient (RJA) --- 830 /W
Drain-Source Breakdown Voltage (BVDSS) VGS=0V , ID=-250uA -20 --- --- V
Static Drain-Source On-Resistance (RDS(ON))2 VGS=-4.5V , ID=-1A --- 400 500 m
Static Drain-Source On-Resistance (RDS(ON))2 VGS=-2.5V , ID=-0.8A --- 600 700 m
Gate Threshold Voltage (VGS(th)) VGS=VDS , ID =-250uA -0.35 --- -1.1 V
Drain-Source Leakage Current (IDSS) VDS=-16V , VGS=0V , TJ=25 --- --- -1 uA
Gate-Source Leakage Current (IGSS) VGS=10V , VDS=0V --- --- 20 nA
HSSC3139 Total Gate Charge (Qg) (-4.5V) VDS=-10V , VGS=-4.5V , ID=-0.6A --- 1.2 nC
Input Capacitance (Ciss) VDS=-15V , VGS=0V , f=1MHz --- 150 pF
Output Capacitance (Coss) --- 20 pF
Reverse Transfer Capacitance (Crss) --- 11 pF
Diode Forward Voltage (VSD)2 VGS=0V , IS=-1A , TJ=25 --- --- -1.2 V

Ordering Information:

Part Number Package Code Packaging Quantity
HSSC3139 SOT-723 8000/Tape&Reel 8000

2410121532_HUASHUO-HSSC3139_C700950.pdf
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