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quality Synchronous buck converter MOSFET HUASHUO HSBB70N02 high cell density N channel device for switching factory
quality Synchronous buck converter MOSFET HUASHUO HSBB70N02 high cell density N channel device for switching factory

Synchronous buck converter MOSFET HUASHUO HSBB70N02 high cell density N channel device for switching

Key Attributes
Model Number: HSBB70N02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
70A
RDS(on):
3.8mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 N-channel
Output Capacitance(Coss):
360pF
Input Capacitance(Ciss):
3.05nF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
HSBB70N02
Package:
PRPAK3x3-8L
Product Description

Product Overview

The HSBB70N02 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key features include super low gate charge, suitability for battery protection, and power management.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Ch 20V Fast Switching MOSFETs
  • Certifications: RoHS, Green Product
  • Guarantees: 100% EAS Guaranteed
  • Reliability: Full function reliability approved
  • Package Code: PRPAK3*3
  • Packaging: 3000/Tape&Reel

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±12 V
ID@TC=25 Continuous Drain Current, VGS @ 10V 70 A
ID@TC=100 Continuous Drain Current, VGS @ 10V 45 A
IDM Pulsed Drain Current 350 A
EAS Single Pulse Avalanche Energy 195 mJ
PD@TC=25 Total Power Dissipation 40 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-ambient (Steady State) --- 62 /W
RJC Thermal Resistance Junction-Case --- 2.3 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 --- --- V
BVDSS/TJ BVDSS Temperature Coefficient Reference to 25, ID=1mA 0.028 --- V/
RDS(ON),typ Static Drain-Source On-Resistance VGS=4.5V , ID=20A 3.0 3.8 m
VGS=2.5V , ID=15A 3.5 4.5 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 --- 1.0 V
VGS(th) VGS(th) Temperature Coefficient -6.16 --- mV/
IDSS Drain-Source Leakage Current VDS=20V , VGS=0V , TJ=25 --- 1 uA
VDS=20V , VGS=0V , TJ=55 --- 5 uA
IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- ±100 nA
gfs Forward Transconductance VDS=10V , ID=20A 99 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 1.7 ---
Qg Total Gate Charge (4.5V) VDS=20V , VGS=10V , ID=20A 37 --- nC
Qgs Gate-Source Charge 5.5 --- nC
Qgd Gate-Drain Charge 8.2 --- nC
Td(on) Turn-On Delay Time VDD=10V , VGS=4.5V , RG=3.3 ID=20A 10 --- ns
Tr Rise Time 5.5 --- ns
Td(off) Turn-Off Delay Time 49 --- ns
Tf Fall Time 5.3 --- ns
Ciss Input Capacitance VDS=10V , VGS=0V , f=1MHz 3050 --- pF
Coss Output Capacitance 360 --- pF
Crss Reverse Transfer Capacitance 40 --- pF
IS Continuous Source Current VG=VD=0V , Force Current --- 70 A
ISM Pulsed Source Current --- 350 A
VSD Diode Forward Voltage VGS=0V , IS=20A , TJ=25 --- 1.0 V
trr Reverse Recovery Time IF=20A , dI/dt=100A/s , TJ=25 16 --- nS
Qrr Reverse Recovery Charge 6.6 --- nC

2410122016_HUASHUO-HSBB70N02_C22359233.pdf

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