High cell density trenched MOSFET HUASHUO HSP6032A designed for fast switching and power conversion
Key Attributes
Model Number:
HSP6032A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
75A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
4.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
151pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.307nF
Output Capacitance(Coss):
201pF
Pd - Power Dissipation:
89W
Gate Charge(Qg):
57nC@10V
Mfr. Part #:
HSP6032A
Package:
TO-220
Product Description
Product Overview
The HSP6032A is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Device Available
- Technology: Advanced high cell density Trench technology
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSP6032A | Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID @ TC=25) | VGS @ 10V | 75 | A | |||
| Continuous Drain Current (ID @ TC=100) | VGS @ 10V | 57 | A | |||
| Pulsed Drain Current (IDM) | 280 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 80 | mJ | ||||
| Avalanche Current (IAS) | 40 | A | ||||
| Total Power Dissipation (PD @ TC=25) | 89 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | --- | 60 | /W | |||
| Thermal Resistance Junction-case (RJC) | --- | 1.4 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=20A | --- | 7.1 | 8.5 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 2 | --- | 4.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA | |
| Electrical Characteristics | Total Gate Charge (Qg) | VDS=30V , VGS=10V , ID=18A | --- | 57 | --- | nC |
| Input Capacitance (Ciss) | VDS=30V , VGS=0V , f=1MHz | --- | 3307 | --- | pF | |
| Output Capacitance (Coss) | --- | 201 | --- | pF | ||
| Reverse Transfer Capacitance (Crss) | --- | 151 | --- | pF | ||
| Diode Characteristics | Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | 75 | A |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
2410121448_HUASHUO-HSP6032A_C845620.pdf
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