Fast switching P channel MOSFET HUASHUO HSH120P03 30V trench technology low RDS ON for power circuits

Key Attributes
Model Number: HSH120P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
3.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
530pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
7.3nF@15V
Pd - Power Dissipation:
200W
Gate Charge(Qg):
125nC@10V
Mfr. Part #:
HSH120P03
Package:
TO-263
Product Description

Product Overview

The HSH120P03 is a P-channel 30V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HSH
  • Product Type: P-Ch MOSFETs
  • Voltage Rating: 30V
  • Switching Speed: Fast Switching
  • Technology: Trench
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed, Full Function Reliability Approved

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V1,6 -120 A
ID@TC=100 Continuous Drain Current, VGS @ -10V1,6 -89 A
IDM Pulsed Drain Current2 -504 A
EAS Single Pulse Avalanche Energy3 576 mJ
PD@TC=25 Total Power Dissipation4 200 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient 1(Steady State) --- 62 /W
RJC Thermal Resistance Junction-case 1 --- 0.81 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-20A 3.5 3.9 m
VGS=-4.5V , ID=-20A 5.1 6 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 --- -2.5 V
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25 --- -1 uA
VDS=-24V , VGS=0V , TJ=55 --- -5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ±100 nA
Qg Total Gate Charge (-10V) VDS=-15V , VGS=-10V , ID=-20A 125 --- nC
Qgs Gate-Source Charge 12 --- nC
Qgd Gate-Drain Charge 31 --- nC
td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3, ID=-20A 14 --- ns
tr Rise Time 12 --- ns
td(off) Turn-Off Delay Time 66 --- ns
tf Fall Time 35 --- ns
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz 7300 --- pF
Coss Output Capacitance 819 --- pF
Crss Reverse Transfer Capacitance 530 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- -120 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 --- -1.2 V

2410121435_HUASHUO-HSH120P03_C7543769.pdf
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