Fast switching P channel MOSFET HUASHUO HSH120P03 30V trench technology low RDS ON for power circuits
Product Overview
The HSH120P03 is a P-channel 30V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HSH
- Product Type: P-Ch MOSFETs
- Voltage Rating: 30V
- Switching Speed: Fast Switching
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1,6 | -120 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1,6 | -89 | A | |||
| IDM | Pulsed Drain Current2 | -504 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 576 | mJ | |||
| PD@TC=25 | Total Power Dissipation4 | 200 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient 1(Steady State) | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-case 1 | --- | 0.81 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-20A | 3.5 | 3.9 | m | |
| VGS=-4.5V , ID=-20A | 5.1 | 6 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | --- | -1 | uA | |
| VDS=-24V , VGS=0V , TJ=55 | --- | -5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| Qg | Total Gate Charge (-10V) | VDS=-15V , VGS=-10V , ID=-20A | 125 | --- | nC | |
| Qgs | Gate-Source Charge | 12 | --- | nC | ||
| Qgd | Gate-Drain Charge | 31 | --- | nC | ||
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3, ID=-20A | 14 | --- | ns | |
| tr | Rise Time | 12 | --- | ns | ||
| td(off) | Turn-Off Delay Time | 66 | --- | ns | ||
| tf | Fall Time | 35 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 7300 | --- | pF | |
| Coss | Output Capacitance | 819 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 530 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -120 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | |
2410121435_HUASHUO-HSH120P03_C7543769.pdf
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