N Channel MOSFET HUASHUO HSH6040 Featuring Trench Technology and Low Gate Charge for Power Switching
Key Attributes
Model Number:
HSH6040
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.2mΩ@10V,18A
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
245pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.706nF
Output Capacitance(Coss):
325pF
Pd - Power Dissipation:
166W
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
HSH6040
Package:
TO-263
Product Description
Product Overview
The HSH6040 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HSH
- Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSH6040 | Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID@TC=25, VGS @ 10V) | 140 | A | ||||
| Continuous Drain Current (ID@TC=100, VGS @ 10V) | 90 | A | ||||
| Pulsed Drain Current (IDM) | 300 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 125 | mJ | ||||
| Avalanche Current (IAS) | 50 | A | ||||
| Total Power Dissipation (PD@TC=25) | 166 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 62 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 0.75 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 60 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON),typ) | VGS=10V, ID=18A | --- | 4.3 | 5.2 | m | |
| Static Drain-Source On-Resistance (RDS(ON),typ) | VGS=4.5V, ID=10A | --- | 6 | 7 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID =250uA | 1.2 | --- | 2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=48V, VGS=0V, TJ=25 | --- | --- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=48V, VGS=0V, TJ=55 | --- | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=±20V, VDS=0V | --- | --- | ±100 | nA | |
| Forward Transconductance (gfs) | VDS=10V, ID=30A | --- | 75 | --- | S | |
| Gate Resistance (Rg) | VDS=0V, VGS=0V, f=1MHz | --- | 0.7 | --- | ||
| Total Gate Charge (Qg) | VDS=48V, VGS=10V, ID=18A | --- | 75 | --- | nC | |
| Gate-Source Charge (Qgs) | --- | 15.5 | --- | nC | ||
| Gate-Drain Charge (Qgd) | --- | 20.3 | --- | nC | ||
| Turn-On Delay Time (Td(on)) | VDD=30V, VGS=10V, RG=3.3, ID=18A | --- | 18.5 | --- | ns | |
| Rise Time (Tr) | --- | 8.8 | --- | ns | ||
| Turn-Off Delay Time (Td(off)) | --- | 58.8 | --- | ns | ||
| Fall Time (Tf) | --- | 15.8 | --- | ns | ||
| Input Capacitance (Ciss) | VDS=15V, VGS=0V, f=1MHz | --- | 4706 | --- | pF | |
| Output Capacitance (Coss) | --- | 325 | --- | pF | ||
| Reverse Transfer Capacitance (Crss) | --- | 245 | --- | pF | ||
| Continuous Source Current (IS) | VG=VD=0V, Force Current | --- | --- | 140 | A | |
| Diode Forward Voltage (VSD) | VGS=0V, IS=1A, TJ=25 | --- | --- | 1.2 | V | |
| Reverse Recovery Time (trr) | IF=18A, di/dt=100A/s, TJ=25 | --- | 22.9 | --- | nS | |
| Reverse Recovery Charge (Qrr) | --- | 11.6 | --- | nC |
2410121448_HUASHUO-HSH6040_C845624.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
