switching MOSFET HUASHUO HSS2319 P channel device offering excellent RDSON and green product status
Key Attributes
Model Number:
HSS2319
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
3.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
53pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
620pF@15V
Pd - Power Dissipation:
1.32W
Gate Charge(Qg):
6.4nC@4.5V
Mfr. Part #:
HSS2319
Package:
SOT-23L
Product Description
Product Overview
The HSS2319 is a P-channel, 40V fast-switching MOSFET utilizing high cell density trenched technology. It offers excellent RDS(ON) and efficiency, making it ideal for most low-power switching and load switch applications. This product meets RoHS and Green Product requirements and is available as a Green Device. Key advantages include super low gate charge and excellent CdV/dt effect decline, supported by advanced high cell density trench technology.Product Attributes
- Brand: HSS (implied by product number HSS2319 and website www.hs-semi.cn)
- Technology: Trench MOSFET
- Channel Type: P-Channel
- Certifications: RoHS, Green Product
- Device Type: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -40 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V1 | -3.7 | -3.2 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V1 | -3.0 | -2.6 | A | ||
| IDM | Pulsed Drain Current2 | -16.1 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.32 | 1 | W | ||
| PD@TA=70 | Total Power Dissipation3 | 0.84 | 0.64 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | (10s Steady State) | 125 | /W | ||
| RJA | Thermal Resistance Junction-Ambient1 | (t ≤10s) | 95 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | 80 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -40 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.018 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-3A | 70 | mΩ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-2.5V , ID=-2A | 100 | mΩ | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | 2.5 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | -1 | µA | ||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=55 | -5 | µA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | 5.8 | S | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -3.2 | A | ||
| ISM | Pulsed Source Current2,4 | -16.1 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1 | V | ||
| Capacitance | ||||||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 620 | pF | ||
| Coss | Output Capacitance | 65 | pF | |||
| Crss | Reverse Transfer Capacitance | 53 | pF | |||
| Switching Time | ||||||
| td(on) | Turn-On Delay Time | VDD=-20V , VGS=-4.5V , RG=3.3Ω, ID=-3A | 4.2 | ns | ||
| tr | Rise Time | 23 | ns | |||
| td(off) | Turn-Off Delay Time | 26.8 | ns | |||
| tf | Fall Time | 20.6 | ns | |||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSS2319 | SOT-23L | 3000/Tape&Reel | ||||
Notes:
1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. The power dissipation is limited by 150°C junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121656_HUASHUO-HSS2319_C700956.pdf
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